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参数资料
| 型号： | KM23C8000DG |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8) CMOS Mask ROM(8M位(1Mx8) CMOS掩膜ROM) |
| 中文描述： | 800万位（1Mx8）的CMOS掩模ROM（800万位（1Mx8）的CMOS掩膜光盘） |
| 文件页数： | 1/4页 |
| 文件大小： | 75K |
| 代理商： | KM23C8000DG |
KM23C8000D(G)
CMOS MASK ROM
Pin Name
Pin Function
A0 - A19
Address Inputs
Q0 - Q7
Data Outputs
CE
Chip Enable
OE
Output Enable
VCC
Power (+5V)
VSS
Ground
8M-Bit (1Mx8) CMOS MASK ROM
The KM23C8000D(G) is
a fully static mask programmable
ROM organized 1,048,576 x 8 bit. It is fabricated using silicon
gate CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C8000D is packaged in a 32-DIP and the
KM23C8000DG in a 32-SOP.
GENERAL DESCRIPTION
FEATURES
1,048,576 x 8 bit organization
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby
: 50
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C8000D
: 32-DIP-600
-. KM23C8000DG : 32-SOP-525
A19
X
AND
DECODER
BUFFERS
A0
Y
AND
DECODER
BUFFERS
MEMORY CELL
SENSE AMP.
CONTROL
LOGIC
MATRIX
(1,048,576x8)
BUFFERS
CE
OE
.
Q0
Q7
. . .
PIN CONFIGURATION
A19
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
CE
OE
Q0
Q1
Q4
Q5
Q6
Q7
A9
A10
A11
DIP
KM23C8000D(G)
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
7
8
32
31
9
10
30
29
11
12
28
27
13
14
26
25
15
16
24
23
21
20
19
18
17
Q2
VSS
VCC
A18
A17
A14
A13
A8
Q3
&
SOP
A0
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