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参数资料
| 型号： | KM718V089T-60 |
| 元件分类： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 3.5 ns, PQFP100 |
| 封装： | 20 X 14 MM, TQFP-100 |
| 文件页数： | 20/20页 |
| 文件大小： | 536K |
| 代理商： | KM718V089T-60 |
512Kx36 & 1Mx18 Synchronous SRAM
- 9 -
Rev 1.0
December 1999
KM718V089
KM736V989
PASS-THROUGH TRUTH TABLE
Note : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
PREVIOUS CYCLE
PRESENT CYCLE
NEXT CYCLE
OPERATION
WRITE
OPERATION
CS1
WRITE
OE
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
Initiate Read Cycle
Address=An
Data=Qn-1 for all bytes
L
H
L
Read Cycle
Data=Qn
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=Qn-1 for all bytes
H
L
No carryover from
previous cycle
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=High-Z
H
No carryover from
previous cycle
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
Initiate Read Cycle
Address=An
Data=Qn-1 for one byte
L
H
L
Read Cycle
Data=Qn
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
No new cycle
Data=Qn-1 for one byte
H
L
No carryover from
previous cycle
CAPACITANCE*(TA=25
°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
7
pF
Output Capacitance
COUT
VOUT=0V
-
9
pF
OPERATING CONDITIONS at 3.3V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
3.135
3.3
3.465
V
Ground
VSS
0
V
OPERATING CONDITIONS at 2.5V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
2.375
2.5
2.9
V
Ground
VSS
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 4.6
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
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