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参数资料
| 型号： | KM736V889T-67 |
| 元件分类： | SRAM |
| 英文描述： | 256K X 36 CACHE SRAM, 3.8 ns, PQFP100 |
| 封装： | 20 X 14 MM, TQFP-100 |
| 文件页数： | 10/20页 |
| 文件大小： | 540K |
| 代理商： | KM736V889T-67 |
KM718V989
256Kx36 & 512Kx18 Synchronous SRAM
- 18 -
Rev 6.0
March 2000
KM736V889
APPLICATION INFORMATION
DEPTH EXPANSION
Data
Address
CLK
ADS
Microprocessor
CS2
CLK
ADSC
WEx
OE
CS1
Address Data
ADV
ADSP
512Kx18
SPB
SRAM
(Bank 0)
CS2
CLK
ADSC
WEx
OE
CS1
Address Data
ADV
ADSP
512Kx18
SPB
SRAM
(Bank 1)
CLK
Address
Cache
Controller
A[0:19]
A[19]
A[0:18]
A[19]
A[0:18]
I/O[0:71]
Clock
ADSP
ADDRESS
Data Out
Bank 0 is selected by CS2, and Bank 1 deselected by CS2
Q1-1
Q1-2
Q1-4
Q1-3
OE
Data Out
tSS
tSH
Don
′t Care
A1
A2
WRITE
CS1
An+1
ADV
(Bank 0)
(Bank 1)
Q2-2
Q2-4
Q2-3
tAS
tAH
tWS
tWH
tADVS
tADVH
tOE
tLZOE
tHZC
Bank 0 is deselected by CS2, and Bank 1 selected by CS2
tCSS
tCSH
tCD
tLZC
[0:n]
Undefined
Q2-1
INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
The Samsung 512Kx18 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 512K depth to 1M depth without extra logic.
*Notes : n = 14 32K depth ,
15 64K depth
16 128K depth ,
17 256K depth
18 512K depth ,
19 1M depth
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相关代理商/技术参数 |
参数描述 |
|---|---|
| KM736V989 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Synchronous SRAM |
| KM737N | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I) |
| KM737N-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I) |
| KM738N | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I) |
| KM738N-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I) |
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