参数资料
型号: KMPC8541EPXAQF
厂商: Freescale Semiconductor
文件页数: 4/88页
文件大小: 0K
描述: IC MPU POWERQUICC III 783-FCPBGA
标准包装: 1
系列: MPC85xx
处理器类型: 32-位 MPC85xx PowerQUICC III
速度: 1.0GHz
电压: 1.3V
安装类型: 表面贴装
封装/外壳: 783-BBGA,FCBGA
供应商设备封装: 783-FCPBGA(29x29)
包装: 托盘
MPC8541E PowerQUICC III Integrated Communications Processor Hardware Specification, Rev. 4.2
12
Freescale Semiconductor
Power Characteristics
3
Power Characteristics
The estimated typical power dissipation for this family of PowerQUICC III devices is shown in Table 4.
Table 4. Power Dissipation(1) (2)
Notes:
1.
2.
CCB Frequency (MHz)
Core Frequency (MHz)
VDD
Typical Power(3)(4) (W)
3.
4.
Maximum Power(5) (W)
5.
200
400
1.2
4.4
6.1
500
1.2
4.7
6.5
600
1.2
5.0
6.8
267
533
1.2
4.9
6.7
667
1.2
5.4
7.2
800
1.2
5.8
8.6
333
667
1.2
5.5
7.4
833
1.2
6.0
8.8
1000(6)
6.
1.3
9.0
12.2
Notes:
1. The values do not include I/O supply power (OVDD, LVDD, GVDD) or AVDD.
2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance. Any customer design must take these considerations into account to ensure the maximum 105 degrees junction
temperature is not exceeded on this device.
3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction temperature of Tj = 105° C, and a
Dhrystone 2.1 benchmark application.
4. Thermal solutions likely need to design to a value higher than Typical Power based on the end application, TA target, and I/O
power
5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction temperature of Tj = 105° C, and
an artificial smoke test.
6. The nominal recommended VDD = 1.3V for this speed grade.
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