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| 型号： | KMPC8541EVTALF |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/88页 |
| 文件大小： | 0K |
| 描述： | IC MPU POWERQUICC III 783-FCPBGA |
| 标准包装： | 1 |
| 系列： | MPC85xx |
| 处理器类型： | 32-位 MPC85xx PowerQUICC III |
| 速度： | 667MHz |
| 电压： | 1.2V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 783-BBGA，FCBGA |
| 供应商设备封装： | 783-FCPBGA（29x29） |
| 包装： | 托盘 |
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MPC8541E PowerQUICC III Integrated Communications Processor Hardware Specification, Rev. 4.2
18
Freescale Semiconductor
DDR SDRAM
MCS(n) output hold with respect to MCK
333 MHz
266 MHz
200 MHz
tDDKHCX
2.0
2.65
3.8
—ns
4
MCK to MDQS
333 MHz
266 MHz
200 MHz
tDDKHMH
–0.9
–1.1
–1.2
0.3
0.5
0.6
ns
5
MDQ/MECC/MDM output setup with respect to
MDQS
333 MHz
266 MHz
200 MHz
tDDKHDS,
tDDKLDS
900
1200
—ps
6
MDQ/MECC/MDM output hold with respect to
MDQS
333 MHz
266 MHz
200 MHz
tDDKHDX,
tDDKLDX
900
1200
—ps
6
MDQS preamble start
tDDKHMP
–0.5
× tMCK – 0.9
–0.5
× tMCK +0.3
ns
7
MDQS epilogue end
tDDKLME
–0.9
0.3
ns
7
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until
outputs (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock
reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. In the source synchronous mode, MCK/MCK can be shifted in 1/4 applied cycle increments through the Clock Control
Register. For the skew measurements referenced for tAOSKEW it is assumed that the clock adjustment is set to align the
address/command valid with the rising edge of MCK.
4. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS. For the
ADDR/CMD setup and hold specifications, it is assumed that the Clock Control register is set to adjust the memory clocks
by 1/2 applied cycle. The MCSx pins are separated from the ADDR/CMD (address and command) bus in the HW spec. This
was separated because the MCSx pins typically have different loadings than the rest of the address and command bus,
even though they have the same timings.
5. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing
(DD) from the rising edge of the MCK(n) clock (KH) until the MDQS signal is valid (MH). In the source synchronous mode,
MDQS can launch later than MCK by 0.3 ns at the maximum. However, MCK may launch later than MDQS by as much as
0.9 ns. tDDKHMH can be modified through control of the DQSS override bits in the TIMING_CFG_2 register. In source
synchronous mode, this typically is set to the same delay as the clock adjust in the CLK_CNTL register. The timing
parameters listed in the table assume that these two parameters have been set to the same adjustment value. See the
MPC8555E PowerQUICC III Integrated Communications Processor Reference Manual for a description and
understanding of the timing modifications enabled by use of these bits.
6. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the MPC8541E.
7. All outputs are referenced to the rising edge of MCK(n) at the pins of the MPC8541E. Note that tDDKHMP follows the symbol
conventions described in note 1.
Table 14. DDR SDRAM Output AC Timing Specifications for Source Synchronous Mode (continued)
At recommended operating conditions with GVDD of 2.5 V ± 5%.
Parameter
Symbol 1
Min
Max
Unit
Notes
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