参数资料
型号: KTD1347
厂商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT)
中文描述: 外延平面NPN晶体管(调压器继电器驱动器灯驱动器,电气设备)
文件页数: 1/3页
文件大小: 87K
代理商: KTD1347
1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1347
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB985.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
P
Q
R
S
TO-92L
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
25
1.25
Φ
1.50
0.10 MAX
12.50 0.50
1.00
O
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
G
P
H
H
E
D
H
R
S
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification A:100
200, B:140
280, C:200
400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Vollector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
6
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=40V, I
E
=0
-
-
1
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=100
100
-
400
h
FE
(2)
V
CE
=2V, I
C
=3A
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=100
-
0.19
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=2A, I
B
=100
-
0.94
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50
-
150
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
25
-
Switching
Time
Turn-on Time
t
on
I
B2
470
μ
25
-5V
25V
10I 1=-10I =I =1A
100
μ
50
VR
I
B1
PW<
μ
s
DC 1%
R8
INPUT
-
70
-
nS
Storage Time
t
stg
-
650
-
Fall Time
t
f
-
35
-
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