参数资料
型号: KTK5131S
厂商: KEC Holdings
英文描述: N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
中文描述: N通道MOS场效应管(超高速开关,模拟开关)
文件页数: 1/3页
文件大小: 82K
代理商: KTK5131S
2001. 10. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5131S
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P
7
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
KA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGSS
20
V
DC Drain Current
ID
50
mA
Drain Power Dissipation
PD
200
mW
Channel Temperature
Tch
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
IGSS
VGS= 16V, VDS=0V
-
1
A
Drain-Source Breakdown Voltage
V(BR)DSS
ID=100 A, VGS=0V
30
-
V
Drain Cut-off Current
IDSS
VDS=30V, VGS=0V
-
1
A
Gate Threshold Voltage
Vth
VDS=3V, ID=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Yfs|
VDS=3V, ID=10mA
20
-
mS
Drain-Source ON Resistance
RDS(ON)
ID=10mA, VGS=2.5V
-
15
40
Input Capacitance
Ciss
VDS=3V, VGS=0V, f=1MHz
-
5.5
-
pF
Reverse Transfer Capacitance
Crss
VDS=3V, VGS=0V, f=1MHz
-
1.6
-
pF
Output Capacitance
Coss
VDS=3V, VGS=0V, f=1MHz
-
6.5
-
pF
Switching
Time
Turn-on Time
ton
VDD=3V, ID=10mA, VGS=0 2.5V
-
140
-
nS
Turn-off Time
toff
-
140
-
nS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
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