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参数资料
| 型号： | L2004D8 |
| 元件分类： | 晶闸管 |
| 英文描述： | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 97K |
| 代理商： | L2004D8 |
Sensitive Triacs
Data Sheets
http://www.teccor.com
E1 - 4
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Specified Test Conditions
di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA with
0.1 s rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM — Peak off-state current, gate open; VDRM = max rated value
IGT — DC gate trigger current in specific operating quadrants;
VD = 12 V dc; RL = 60
IGTM — Peak gate trigger current
IH — Holding current gate open; initial on-state current = 100 mA dc
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT ≤ IGTM
tgt — Gate controlled turn-on time; IGT = 50 mA with 0.1 s rise time
VDRM — Repetitive peak off-state/blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc; RL = 60
VTM — Peak on-state voltage at max rated RMS current
General Notes
All measurements are made with 60 Hz resistive load and at an
ambient temperature of +25
°C unless otherwise specified.
Operating temperature range (TJ) is -65
°C to +110 °C for TO-92
devices and -40
°C to +110 °C for all other devices.
Storage temperature range (TS) is -65
°C to +150 °C for TO-92
devices, -40
°C to +150 °C for TO-202 devices, and -40 °C to
+125
°C for TO-220 devices.
Lead solder temperature is a maximum of 230
°C for 10 seconds
maximum at a minimum of 1/16” (1.59 mm) from case.
The case or lead temperature (TC or TL) is measured as shown on
dimensional outline drawings. See “Package Dimensions” section
of this catalog.
IT(RMS)
Part No.
VDRM
IGT
IDRM
Isolated
Non-isolated
(11)
TO-220
TO-252
D-Pak
TO-251
V-Pak
(1)
Volts
(3) (6)
mAmps
(1) (14)
mAmps
QI
QII
QIII
QIV
TC = 25 °C TC = 110 °C
MAX
See “Package Dimensions” section for variations. (12)
MIN
MAX
6A
L2006L5
L2006D5
L2006V5
200
5555
0.02
0.5
L4006L5
L4006D5
L4006V5
400
5555
0.02
0.5
L6006L5
L6006D5
L6006V5
600
5555
0.02
0.5
L2006L6
L2006D6
L2006V6
200
5
10
0.02
0.5
L4006L6
L4006D6
L4006V6
400
5
10
0.02
0.5
L6006L6
L6006D6
L6006V6
600
5
10
0.02
0.5
L2006L8
L2006D8
L2006V8
200
10
20
0.02
0.5
L4006L8
L4006D8
L4006V8
400
10
20
0.02
0.5
L6006L8
L6006D8
L6006V8
600
10
20
0.02
0.5
8A
L2008L6
L2008D6
L2008V6
200
5
10
0.02
0.5
L4008L6
L4008D6
L4008V6
400
5
10
0.02
0.5
L6008L6
L6008D6
L6008V6
600
5
10
0.02
0.5
L2008L8
L2008D8
L2008V8
200
10
20
0.02
0.5
L4008L8
L4008D8
L4008V8
400
10
20
0.02
0.5
L6008L8
L6008D8
L6008V8
600
10
20
0.02
0.5
MT1
MT2
G
MT2
MT1
G
MT2
G
MT1
相关PDF资料 |
PDF描述 |
|---|---|
| L2004V3 | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2004V5 | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2004V6 | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2004V8 | 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-251 |
| L2006D5 | 200 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
相关代理商/技术参数 |
参数描述 |
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| L2004D8RP | 功能描述:双向可控硅 200V 4A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L2004D8TP | 功能描述:双向可控硅 200V 4A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L2004E512V | 制造商:TECCOR 制造商全称:TECCOR 功能描述:Thyristor Product Catalog |
| L2004F31 | 功能描述:双向可控硅 200V 4A Sensing 3-3-3-3mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L2004F312 | 功能描述:双向可控硅 200V 4A Sensing 3-3-3-3mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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