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参数资料
| 型号： | L2720D |
| 元件分类： | 运算放大器 |
| 英文描述： | Operational Amplifier |
| 中文描述： | 运算放大器 |
| 文件页数： | 6/6页 |
| 文件大小： | 58K |
| 代理商： | L2720D |
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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L2720D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L2720D13TR | 功能描述:运算放大器 - 运放 Dual Hi-Gain Hi-Out RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| L2720W | 制造商:STMicroelectronics 功能描述:L2720W - Rail/Tube |
| L2720W13TR | 功能描述:运算放大器 - 运放 Low Drop Dual 1A Op Amp SO16 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| L2721 | 制造商:POLYFET 制造商全称:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| L2722 | 功能描述:运算放大器 - 运放 Dual Hi-Gain Hi-Out RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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