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| 型号： | L6004D8 |
| 元件分类： | 晶闸管 |
| 英文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 7/8页 |
| 文件大小： | 97K |
| 代理商： | L6004D8 |
Data Sheets
Sensitive Triacs
2004 Teccor Electronics
E1 - 7
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Figure E1.3 Maximum Allowable Case Temperature versus
On-state Current (4 A, 6 A, and 8 A)
Figure E1.4 On-state Current versus On-state Voltage (Typical)
Figure E1.5 Normalized DC Holding Current versus Case Temperature
Figure E1.6 Normalized DC Gate Trigger Voltage for All Quadrants
versus Case Temperature
Figure E1.7 Normalized DC Gate Trigger Current for All Quadrants
versus Case Temperature
Figure E1.8 Turn-on Time versus Gate Trigger Current (Typical)
01
2
3
4
5
6
7
8
60
65
70
75
80
85
90
95
100
105
110
RMS On-State Current [IT(RMS)] - Amps
Maximum
Allowable
Case
Temperature
( T
C
) -
C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured as
shown on Dimensional Drawings
4 A TYPE 1 and 3 TO-202
4 A TO-220 (Isolated)
4 A TO-252
8 A
TO-220
(Isolated)
6 A
TO-220
(Isolated)
4 A TYPE 2 and 4 TO-202
4 A TO-251
8 A
TO-251
and
TO-252
6 A TO-251
6 A TO-252
0
0.5
0.8
1.0
1.2
1.4
1.6
1.8
0
2
4
6
8
10
12
14
16
18
20
Positive or Negative Instantaneous
On-state Voltage (vT) - Volts
Positive
or
Negative
Instantaneous
On-state
Current
(i
T
)-
Amps
1 A
4 A
6 A and 8 A
T
C = 25 C
0.8 A
-40
-15
+25
+65
+110 +125
0
1.0
2.0
3.0
4.0
-65
Case Temperature (TC) - C
INITIAL ON-STATE CURRENT
= 100 mA (DC) 0.8 - 4 A Devices
= 200 mA (DC) 6 - 8 A Devices
Ratio
of
I H
(T
C
=
25
C)
-65
-40
-15
+65
+110 +125
+25
0
.5
1.0
1.5
2.0
Ratio
of
V
GT
V
GT
(T
C
=
25
C)
Case Temperature (TC) - C
-65
-40
-15
+65
+110 +125
+25
0
1.0
2.0
3.0
4.0
Ratio
of
I GT
(T
C
=
25
C)
Case Temperature (TC) - C
12
3
4
6
5
8
10
20
30
40
60
80 100
I
GT
= 5 mA MAX
I
GT
= 10 mA MAX
I
GT
= 20 mA
MAX
I
GT
= 3 mA MAX
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
DC Gate Trigger Current (IGT) - mA
Turn-On
Time
(t
gt
)-
Sec
TC = 25 C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6004D8RP | 功能描述:双向可控硅 600V 4A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L6004D8TP | 功能描述:双向可控硅 600V 4A Sensing 10-10-10-20mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L6004F31 | 功能描述:双向可控硅 600V 4A Sensing 3-3-3-3mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L6004F32 | 功能描述:双向可控硅 600V 4A Sensing 3-3-3-3mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L6004F321 | 功能描述:双向可控硅 600V 4A Sensing 3-3-3-3mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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