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参数资料
| 型号： | L6225PDTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 运动控制电子 |
| 英文描述： | BRUSHLESS DC MOTOR CONTROLLER, 2.8 A, PDSO20 |
| 封装： | POWER, MO-166, SO-20 |
| 文件页数： | 19/20页 |
| 文件大小： | 384K |
| 代理商： | L6225PDTR |
L6225
8/20
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6225 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rd-
son=0.73ohm (typical value @25°C), with intrinsic
fast freewheeling diode. Cross conduction protection
is achieved using a dead time (td = 1
s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped (Vboot)
supply is obtained through an internal Oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output
(VCP) is a square wave at 600kHz (typical) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Components
Values
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1A, IN2A, IN1B and IN2B are TTL/CMOS and
C compatible logic inputs. The internal structure is
shown in Fig. 4. Typical value for turn-on and turn-off
thresholds
are
respectively
Vthon=1.8V
and
Vthoff=1.3V.
Pins ENA and ENB have identical input structure with
the exception that the drains of the Overcurrent and
thermal protection MOSFETs (one for the Bridge A
and one for the Bridge B) are also connected to these
pins. Due to these connections some care needs to
be taken in driving these pins. The ENA and ENB in-
puts may be driven in one of two configurations as
shown in figures 5 or 6. If driven by an open drain
(collector) structure, a pull-up resistor REN and a ca-
pacitor CEN are connected as shown in Fig. 5. If the
driver is a standard Push-Pull structure the resistor
REN and the capacitor CEN are connected as shown
in Fig. 6. The resistor REN should be chosen in the
range from 2.2k
to 180K. Recommended values
for REN and CEN are respectively 100K and 5.6nF.
More information on selecting the values is found in
the Overcurrent Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. ENA and ENB Pins Open Collector
Driving
Figure 6. ENA and ENB Pins Push-Pull Driving
TRUTH TABLE
X
= Don't care
High Z = High Impedance Output
CBOOT
220nF
CP
10nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328
INPUTS
OUTPUTS
EN
IN1
IN2
OUT1
OUT2
L
X
High Z
H
L
GND
H
L
Vs
GND
HLH
GND
Vs
HHH
Vs
5V
D01IN1329
ESD
PROTECTION
5V
OPEN
COLLECTOR
OUTPUT
REN
CEN
ENA or ENB
D02IN1349
5V
PUSH-PULL
OUTPUT
REN
CEN
ENA or ENB
D02IN1350
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6226 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:DMOS DUAL FULL BRIDGE DRIVER |
| L6226D | 功能描述:马达/运动/点火控制器和驱动器 Dual Full Bridge RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| L6226DTR | 功能描述:马达/运动/点火控制器和驱动器 Dual Full Bridge RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| L6226N | 功能描述:马达/运动/点火控制器和驱动器 Dual Full Bridge RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| L6226PD | 功能描述:马达/运动/点火控制器和驱动器 Dual Full Bridge RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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