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参数资料
| 型号： | L6226PDTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 运动控制电子 |
| 英文描述： | BRUSHLESS DC MOTOR CONTROLLER, 2.8 A, PDSO36 |
| 封装： | POWER, SO-36 |
| 文件页数： | 23/24页 |
| 文件大小： | 547K |
| 代理商： | L6226PDTR |
L6226
8/22
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6226 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rd-
son=0.73ohm (typical value @ 25°C), with intrinsic
fast freewheeling diode. Cross conduction protection
is achieved using a dead time (td = 1
s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped (Vboot)
supply is obtained through an internal Oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output
(VCP) is a square wave at 600kHz (typical) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Components
Values
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1A, IN2A, IN1B, IN2B, ENA and ENB are TTL/
CMOS and uC compatible logic inputs. The internal
structure is shown in Fig. 4. Typical value for turn-on
and turn-off thresholds are respectively Vthon=1.8V
and Vthoff = 1.3V.
Pins ENA and ENB are commonly used to implement
Overcurrent and Thermal protection by connecting
them respectively to the outputs OCDA and OCDB,
which are open-drain outputs. If that type of connec-
tion is chosen, some care needs to be taken in driving
these pins. Two configurations are shown in Fig. 5
and Fig. 6. If driven by an open drain (collector) struc-
ture, a pull-up resistor REN and a capacitor CEN are
connected as shown in Fig. 5. If the driver is a stan-
dard Push-Pull structure the resistor REN and the ca-
pacitor CEN are connected as shown in Fig. 6. The
resistor REN should be chosen in the range from
2.2k
to 180K. Recommended values for REN and
CEN are respectively 100K and 5.6nF. More infor-
mation on selecting the values is found in the Over-
current Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. ENA and ENB Pins Open Collector
Driving
Figure 6. ENA and ENB Pins Push-Pull Driving
TRUTH TABLE
X
= Don't care
High Z
= High Impedance Output
CBOOT
220nF
CP
10nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328
INPUTS
OUTPUTS
EN
IN1
IN2
OUT1
OUT2
L
X
High Z
H
L
GND
H
L
Vs
GND
HLH
GND
Vs
HHH
Vs
5V
D01IN1329
ESD
PROTECTION
5V
OPEN
COLLECTOR
OUTPUT
REN
CEN
ENA or ENB
OCDA or OCDB
D02IN1355
5V
PUSH-PULL
OUTPUT
REN
CEN
ENA or ENB
D02IN1356
OCDA or OCDB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6226Q | 功能描述:功率驱动器IC DMOS Full Bridge Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6226Q_10 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:DMOS dual full bridge driver |
| L6226QTR | 功能描述:功率驱动器IC DMOS Full Bridge Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6227 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:DMOS DUAL FULL BRIDGE DRIVER WITH PWM CURRENT CONTROLLER |
| L6227D | 功能描述:马达/运动/点火控制器和驱动器 Dual Full Bridge RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
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