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参数资料
| 型号： | L6382DTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | ROHS COMPLIANT, SOP-20 |
| 文件页数： | 1/22页 |
| 文件大小： | 301K |
| 代理商： | L6382DTR |
March 2007
Rev 6
1/22
22
L6382D
Power management unit
for microcontrolled ballast
Features
■ Integrated high-voltage start-up
■ 4 drivers for PFC, half-bridge & pre-heating
MOSFETs
■ 3.3V microcontroller compatible
■ Fully integrate power management for all
operating modes
■ Internal two point VCC regulator
■ Over-current protection with digital output
signal
■ Cross-conduction protection (interlocking)
■ Under voltage lock-out
■ Integrated bootstrap diode
Applications
■ Dimmable / non-dimmable ballast
Description
The L6382D is suitable for microcontrolled
electronic ballasts embedding a PFC stage and a
half-bridge stage. The L6382D includes 4
MOSFET driving stages (for the PFC, for the half
bridge, for the preheating MOSFET) plus a power
management unit (PMU) featuring also a
reference able to supply the microcontroller in any
condition.
Besides increasing the application efficiency, the
L6382D reduces the bill of materials because
different tasks (regarding drivers and power
management) are performed by a single IC, which
improves the application reliability.
SO-20
Figure 1.
Block diagram
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6384 | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6384D | 制造商:STMicroelectronics 功能描述:IC MOSFET DRIVER HALF BRIDGE ((NW)) |
| L6384D | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER SMD 6384 |
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