参数资料
型号: L6561D
厂商: STMICROELECTRONICS
元件分类: 稳压器
英文描述: 0.7 A POWER FACTOR CONTROLLER, PDSO8
封装: SO-8
文件页数: 6/13页
文件大小: 176K
代理商: L6561D
L6561
2/13
Table 2. Absolute Maximum Ratings
Figure 3. Pin Connection (Top view)
Table 3. Thermal Data
Table 4. Pin Description
(1) Parameter guaranteed by design, not tested in production.
Symbol
Pin
Parameter
Value
Unit
IVcc
8Iq + IZ; (IGD = 0)
30
mA
IGD
7
Output Totem Pole Peak Current (2
s)
±700
mA
INV, COMP
MULT
1, 2, 3
Analog Inputs & Outputs
-0.3 to 7
V
CS
4
Current Sense Input
-0.3 to 7
V
ZCD
5
Zero Current Detector
50 (source)
-10 (sink)
mA
Ptot
Power Dissipation @Tamb = 50 °C
(DIP-8)
(SO-8)
1
0.65
W
Tj
Junction Temperature Operating Range
-40 to 150
°C
Tstg
Storage Temperature
-55 to 150
°C
Symbol
Parameter
SO 8
MINIDIP
Unit
Rth j-amb
Thermal Resistance Junction to ambient
150
100
°C/W
N.
Name
Function
1
INV
Inverting input of the error amplifier. A resistive divider is connected between the output
regulated voltage and this point, to provide voltage feedback.
2
COMP
Output of error amplifier. A feedback compensation network is placed between this pin and the
INV pin.
3
MULT
Input of the multiplier stage. A resistive divider connects to this pin the rectified mains. A voltage
signal, proportional to the rectified mains, appears on this pin.
4
CS
Input to the comparator of the control loop. The current is sensed by a resistor and the resulting
voltage is applied to this pin.
5
ZCD
Zero current detection input. If it is connected to GND, the device is disabled.
6
GND
Current return for driver and control circuits.
7
GD
Gate driver output. A push pull output stage is able to drive the Power MOS with peak current of
400mA (source and sink).
8VCC
Supply voltage of driver and control circuits.
INV
COMP
MULT
CS
1
3
2
4ZCD
GND
GD
VCC
8
7
6
5
DIP8
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