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参数资料
| 型号： | L6713ATR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 稳压器 |
| 英文描述： | 2 A SWITCHING CONTROLLER, 225 kHz SWITCHING FREQ-MAX, PQFP64 |
| 封装： | 10 X 10 MM, TQFP-64 |
| 文件页数： | 24/64页 |
| 文件大小： | 801K |
| 代理商： | L6713ATR |
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Power dissipation
L6713A
30/64
9
Power dissipation
L6713A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power the device is going to dissipate in driving them in
order to avoid overcoming the maximum junction operative temperature. In addition, since
the device has an exposed pad to better dissipate the power, the thermal resistance
between junction and ambient consequent to the layout is also important: thermal pad
needs to be soldered to the PCB ground plane through several VIAs in order to facilitate the
heat dissipation.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
The first one (PDC) depends on the static consumption of the device through the supply pins
and it is simply quantifiable as follow (assuming to supply HS and LS drivers with the same
VCC of the device):
where N is the number of phases.
Drivers' power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency and total gate charge of the
selected MOSFETs. It can be quantified considering that the total power PSW dissipated to
switch the MOSFETs (easy calculable) is dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This
last term is the important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFETs results:
External gate resistors helps the device to dissipate the switching power since the same
power PSW will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device. When driving multiple MOSFETs in parallel, it is
suggested to use one gate resistor for each MOSFET.
P
DC
V
CC
I
CC
NI
CCDRx
NI
BOOTx
++
()
=
P
SW
NF
SW
Q
GHS
V
BOOT
Q
GLS
V
CCDRx
+
()
=
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6714 | 功能描述:功率驱动器IC 4 Phase Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6714TR | 功能描述:功率驱动器IC 4 Phase Controller RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6716 | 制造商:STMicroelectronics 功能描述:DC DC Cntrlr Quad-OUT Sync Step Down 48-Pin VFQFPN EP Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:2/3/4 Phase Controlr Embedded Driver |
| L6716TR | 功能描述:开关变换器、稳压器与控制器 2/3/4 phase CNTRL Embedded Drivers RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| L6717 | 制造商:STMicroelectronics 功能描述:High-Efficiency Hybrid AM2r2 Controller 48-Pin VFQFPN Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:High EFF Hybrid CTRL I2C Embedded Driver |
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