
L8115
LINEAR INTEGRATED CIRCUIT
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R123-013,C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-0.6 ~ +12
V
Input Voltage
VIN
25 Continuous
V
Supply Current
ICC
100
mA
Drain Current (per FET)(set by RCAL)
ID
0 ~ 15
mA
Power Dissipation(Ta=25°С)
PD
500
mW
Operating Temperature
TOPR
-40~+80
°С
Storage Temperature
TSTG
-50~+85
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°С, VCC=5V, ID=10mA, RCAL=33K, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Supply Voltage
VCC
5
10
V
ID1= ID2 (or ID12)=ID3=0
8.5
15
mA
ID1=0,ID2 (or ID12)= ID3=10mA, VPOL=14V
28
35
mA
ID2=0,ID1 (or ID12)= ID3=10mA, VPOL=15.5V
28
35
mA
ID1 and ID3=0, ILB=10mA
18
25
mA
Supply Current
ICC
ID1 and ID3=0, IHB=10mA
18
25
mA
ISUB=0
-3.05
-2.8
-2.55
V
Substrate Voltage
VSUB
(Internally generated)
ISUB=-200μA
-2.4
V
Gate Voltage
ENG
0.005 Vpkpk
Output Noise
Drain Voltage
END
CG=4.7nF,CD=10nF
0.02 Vpkpk
Oscillator Frequency
fOSC
180
330
800
kHz
GATE CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Output Current Range
IGO
-30
2000
μA
Off
VG1O
ID1=0mA, VPOL=14V, IGO1=-10μA
-2.5
-2.25
-2
V
Low
VG1L
ID1=12mA, VPOL=15.5V, IGO1=-10μA
-2.5
-2.25
-2
V
Output Voltage
Gate 1
High
VG1H
ID1=8mA, VPOL=15.5V, IGO1=0μA
0.4
0.75
1
V
Off
VG2O
ID2=0mA, VPOL=15.5V, IGO2=-10μA
-2.5
-2.25
-2
V
Low
VG2L
ID2=12mA, VPOL=14V, IGO2=-10μA
-2.5
-2.25
-2
V
Output Voltage
Gate 2
High
VG2H
ID2=8mA, VPOL=14V, IGO2=0μA
0.4
0.75
1
V
Low
VG3L
ID3=12mA, IGO3=-10μA
-3
-2.75
-2
V
Output Voltage
Gate 3
High
VG3H
ID3=8mA, IGO3=0μA
0.4
0.75
1
V
DRAIN CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Current
ID
8
10
12
mA
Current range
IDRNG
Set by RCAL
0
15
mA
With VCC
△
IDV
VCC =5 ~ 10V
0.5
%/V
Current Change
With TJ
△
IDT
TJ =-40 ~ +70°С
0.05
%/°С
Drain 1 Voltage: High
VD1
ID1=10mA,VPOL=15.5V
2
2.2
2.4
V
Drain 2 Voltage: High
VD2
ID2=10mA,VPOL=14V
2
2.2
2.4
V
Drain 3 Voltage: High
VD3
ID3=10mA,VPOL=15.5V
2
2.2
2.4
V
With VCC
△
VDV
VCC =5 ~ 10V
0.5
%/V
Voltage Change
With TJ
△
VDT
TJ=-40 ~ +70°С
50
ppm
Drain 1
ILEAK1
VD1=0.5V,VPOL=14V
10
μA
Leakage Current
(SSOP-20 only)
Drain 2
ILEAK2
VD2=0.5V,VPOL=15.5V
10
μA