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参数资料
| 型号： | L9904 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 运动控制电子 |
| 英文描述： | BRUSH DC MOTOR CONTROLLER, PDSO20 |
| 封装： | SO-20 |
| 文件页数： | 14/17页 |
| 文件大小： | 279K |
| 代理商： | L9904 |
L9904
6/17
ICP
Charging current
VCP= VVS + 8V
VVS = 13.5V
-50
-75
A
tCP
Charging time 2)
VCP= VVS + 8V
VVS = 13.5V
CCP = 10nF
1.2
4
ms
fCP
Charge pump frequency
VVS = 13.5V
250
500
750
kHz
Drivers for external highside power MOS
VCB1
VCB2
Bootstrap voltage
VVS = 8V; ICBX = 0; VSX = 0
VVS =13.5V; ICBX = 0; VSX = 0
VVS = 20V; ICBX = 0; VSX = 0
7.5
10
14
V
RGH1L
RGH2L
ON-resistance of SINK stage
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 25°C
10
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 125°C
20
RGH1H
RGH2H
ON-resistance of SOURCE stage
IGHX = -50mA; TJ = 25°C
IGHX = -50mA; TJ = 125°C
10
20
VGH1H
VGH2H
Gate ON voltage (SOURCE)
VVS= VSX = 8V; IGHX = 0;
CCBX = 0.1
F
VVS
+6.5V
VVS
+14V
VVS = VSX = 13.5V; IGHX = 0;
CCBX = 0.1
F
VVS+
10V
VVS
+14V
VVS = VSX = 20V; IGHX = 0;
CCBX = 0.1
F
VVS
+10V
VVS
+14V
RGH1
RGH2
Gate discharge resistance
EN = LOW
10
100
k
RS1
RS2
Sink resistance
10
100
k
Drivers for external lowside power MOS
RGL1L
RGL2L
ON-resistance of SINK stage
IGLX = 50mA; TJ = 25°C
IGLX = 50mA; TJ = 125°C
10
20
RGL1H,
RGL2H
ON-resistance of SOURCE stage
IGLX = -50mA; TJ = 25°C
IGLX = -50mA; TJ = 125°C
10
20
VGL1H,
VGL2H
Gate ON voltage (SOURCE)
VVS = 8V; IGLX = 0
VVS = 13.5V; IGLX = 0
VVS = 20V; IGLX = 0
7V
10V
VVS
14V
RGL1
RGL2
Gate discharge resistance
EN = LOW
10
100
k
2. not tested in production: guaranteed by design and verified in characterization
Timing of the drivers
tGH1LH
tGH2LH
Propagation delay time
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
RPR= 10kW
500
ns
Table 5. Electrical Characteristcs (continued)
(8V < VVS < 20V, VEN = HIGH, -40°C
≤ TJ ≤ 150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
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