
D2706 MS IM B8-5775 No.8798-1/11
LB11980H
Overview
LB11980H is a 3-phase brushless motor driver optimal for driving the VCR capstan motors.
Features
3-Phase full-wave current-linear drive system.
Torque ripple correction circuit built-in.(correction factor variable)
Current limiter circuit built in.
Output stage upper/lower over-saturation prevention circuit built in. (No external capacitor required)
FG amplifier built in.
Thermal shutdown circuit built in.
Absolute Maximum Ratings at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
VCC max
7
V
Maximum supply voltage
VS max
25
V
Maximum output current
IO max
1.3
A
Mounted on a specified board *
1.81
W
Allowable power dissipation
Pd max
Independent IC
0.77
W
Operating temperature
Topr
-20 to +75
°C
Storage temperature
Tstg
-55 to +150
°C
* Mounted on a specified board: 114mm
×71.1mm×1.6mm, glass epoxy board
Allowable Operating Range at Ta = 25
°C
Parameter
Symbol
Conditions
Ratings
Unit
VS
5 to 24
V
Supply voltage
VCC
4.5 to 5.5
V
Hall input amplitude
VHALL
Between hall inputs
±30 to ±80
mVo-p
GSENSE input range
VGSENSE
With respect to the control system ground
-0.20 to +0.20
V
Ordering number : EN8798
Monolithic Digital IC
For VCR Capstan
Three-Phase Brushless Motor Driver
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.