参数资料
型号: LCE13-E3/54
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件页数: 1/5页
文件大小: 78K
代理商: LCE13-E3/54
LCE6.5 thru LCE28A
Vishay General Semiconductor
Document Number: 88357
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Low Capacitance TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes TVS cathode end
PRIMARY CHARACTERISTICS
VWM
6.5 V to 28 V
PPPM
1500 W
PD
6.5 W
TJ max.
175 °C
Case Style 1.5KE
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) See Fig. 1
(3) See Fig. 2
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)(2)
PPPM
1500
W
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 2)
PD
6.5
W
Peak power pulse surge current with a 10/1000 s waveform (1)(3)
IPPM
See next table
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料
PDF描述
LCE13A/58 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LCE10/65-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LCE10A/74-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LCE12/60-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LCE12A/68-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
LCE14 功能描述:TVS 二极管 - 瞬态电压抑制器 14Vso 11VAC 58A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
LCE14A 功能描述:TVS 二极管 - 瞬态电压抑制器 14Vso 11VAC 65A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
LCE14A/1 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 14V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
LCE14A/54 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 14V Low Cap RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
LCE14A/TR13 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel