参数资料
型号: LCE7.5A-E3/4
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件页数: 1/5页
文件大小: 81K
代理商: LCE7.5A-E3/4
Vishay General Semiconductor
LCE6.5 thru LCE28A
Document Number 88357
07-Jun-06
www.vishay.com
1
Low Capacitance TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes TVS cathode end
Case Style 1.5KE
MAJOR RATINGS AND CHARACTERISTICS
VWM
6.5 V to 28 V
PPPM
1500 W
PD
6.5 W
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) See Figure 1
(3) See Figure 2
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 s waveform
PPPM
Minimum 1500 (1,2)
W
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 2)
PD
6.5
W
Peak power pulse surge current with a 10/1000 s waveform (1,3)
IPPM
see next table
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料
PDF描述
LCE7.5A-E3/73 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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LCE8.0A-E3/4 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LCE8.0A-E3/51 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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