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参数资料
| 型号： | LDA111S |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER SGL TRANS-OUT 6-SMD |
| 标准包装： | 50 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 3750Vrms |
| 电流传输比（最小值）： | 300% @ 1mA |
| 电流传输比（最大）： | 30000% @ 1mA |
| 输出电压： | 30V |
| 电流 - DC 正向(If)： | 1mA |
| Vce饱和（最大）： | 1V |
| 输出类型： | 有基极的达林顿晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD（300 密耳） |
| 包装： | 管件 |
I NTEGRATED C IRCUITS D IVISION
Absolute Maximum Ratings @ 25oC
LDA111
Parameter
Breakdown Voltage
Reverse Input Voltage
Input Control Current
Peak (10ms)
Ratings
30
5
100
1
Units
V P
V
mA
A
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Power Dissipation
Input Power Dissipation 1
Phototransistor 2
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
1
Derate linearly 1.33mW / °C
2
Derate linearly 2mW / °C
150
150
3750
-40 to +85
-40 to +125
mW
V rms
° C
° C
Electrical Characteristics @ 25oC
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Output Characteristics
Phototransistor Breakdown Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Output Capacitance
I C = 100μA
V CEO = 5V, I F = 0mA
I C = 3mA, I F = 1mA
I F = 1mA, V CE = 2V
25V, f =1MHz
BV CEO
I CEO
V CE(sat)
CTR
C OUT
30
-
-
300
-
85
50
-
8500
3
-
500
1
30000
-
V
nA
V
%
pF
Input Characteristics
Input Control Current
Input Voltage Drop
Reverse Input Current
I C = 3mA, V CE = 2V
I F = 5mA
V R = 5V
I F
V F
I R
-
0.9
-
0.07
1.2
-
1
1.4
10
mA
V
μA
Common Characteristics
Capacitance, Input to Output
-
C I/O
-
3
-
pF
Switching Characteristics @ 25oC
Characteristic
Turn-On Time
Turn-Off Time
Symbol
t on
t off
Test Condition
V CC =5V, I F =1mA, R L =500 ?
Typ
8
345
Units
? s
Switching Time Test Circuit
V CC
Pulse Width=5ms
I F
R L
V CE
I F
V CE
Duty Cycle=1%
90%
10%
t on
t off
2
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