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| 型号： | LEFH1701TG-8 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 数据传输滤波器 |
| 英文描述： | 8 FUNCTIONS, DATA LINE FILTER |
| 封装： | ROHS COMPLIANT, SLP3313P16, 16 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 298K |
| 代理商： | LEFH1701TG-8 |
LEFH1701TG-8
ESD/EMI PROTECTION DEVICE
STAND-OFF VOLTAGE – 3.3 Volts
GENERAL DESCRIPTION
The LEFH1701TG-8 is a low pass filter array with integrated
TVS diodes. It is designed to suppress unwanted EMI/RFI
signals and provide electrostatic discharge (ESD) protection
in portable electronic equipment. This state-of-the-art device
utilizes solid-state silicon-avalanche technology for superior
clamping performance and DC electrical characteristics.
They have been optimized for protection of color LCD
panels in cellular phones and other portable electronics.
FEATURES
Pi-style EMI filters in a capacitor-inductor-capacitor
(C-L-C) network.
Greater than 30dB attenuation (typical) at 1GHz
Protection and filtering for eight lines
IEC 61000-4-2, level 4 ( ESD ), > ±15KV ( air ) ; > ±8KV
( contact ).
APPLICATION
LCD and camera data lines in mobile handsets
Wireless handsets
LCD and camera modules
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
SLP3313P16
Pin Assignment (Top side view)
Device Schematic (8X)
SLP3313P16
DIM.
MIN.
MAX.
A
0.45
0.65
A1
0.00
0.05
A3
0.15 REF
D
3.22
3.38
E
1.27
1.43
D1
2.7
2.9
E1
0.3
0.5
K
0.2 MIN
b
0.15
0/25
e
0.4 TYP
L
0.17
0.33
All Dimensions in millimeter
MAXIMUM RATINGS (Tj=25oC, unless otherwise specified)
Rating
Symbol
Value
Unit
ESD per IEC 61000-4-2 (Air)
VESD
+/- 25
kV
ESD per IEC 61000-4-2 (Contact)
VESD
+/- 20
kV
Operating Junction Temperature Range
TJ
-40 to + 85
℃
Storage Temperature Range
Tstg
-55 to + 150
℃
Soldering Temperature, t max = 10s
TL
260
℃
ELECTRICAL CHARACTERISTICS (Tj= 25℃ unless otherwise noticed)
Parameter
Symbol
Condition
MIn
Typ
Max
Unit
Reverse standoff voltage
VRWM
---
3.3
V
Breakdown voltage
VBR
IR =1mA
5.6
6.8
9.0
V
Reverse leakage current
IRM
VDRM = 3.3V
---
0.02
1.0
uA
Junction capacitance
CJ
VR = 2.5V , f = 1MHz, Any I/O to GND
18.8
23.5
28.2
pF
Roll-off Frequency at -6dB Attenuation
fc
Note1
---
400
---
MHz
Note: It is guaranteed by design and characterization.
Rev. 0, Aug-2010, KSIR41
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