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参数资料
型号： LFEC10E-3FN256C
厂商： Lattice Semiconductor Corporation
文件页数： 90/163页
文件大小： 0K
描述： IC FPGA 10.2KLUTS 195I/O 256-BGA
标准包装： 90
系列： EC
逻辑元件/单元数： 10200
RAM 位总计： 282624
输入/输出数： 195
电源电压： 1.14 V ~ 1.26 V
安装类型： 表面贴装
工作温度： 0°C ~ 85°C
封装/外壳： 256-BGA
供应商设备封装： 256-FPBGA（17x17）
2-29
Architecture
LatticeECP/EC Family Data Sheet
Figure 2-34. LatticeECP/EC Banks
LatticeECP/EC devices contain two types of sysI/O buffer pairs.
1.
Top and Bottom sysI/O Buffer Pairs (Single-Ended Outputs Only)
The sysI/O buffer pairs in the top and bottom banks of the device consist of two single-ended output drivers
and two sets of single-ended input buffers (both ratioed and referenced). The referenced input buffer can also
be configured as a differential input.
The two pads in the pair are described as “true” and “comp”, where the true pad is associated with the positive
side of the differential input buffer and the comp (complementary) pad is associated with the negative side of
the differential input buffer.
Only the I/Os on the top and bottom banks have programmable PCI clamps. These I/O banks also support hot
socketing with IDK less than 1mA. Note that the PCI clamp is enabled after VCC, VCCAUX and VCCIO are at valid
operating levels and the device has been configured.
2.
Left and Right sysI/O Buffer Pairs (Differential and Single-Ended Outputs)
The sysI/O buffer pairs in the left and right banks of the device consist of two single-ended output drivers, two
sets of single-ended input buffers (both ratioed and referenced) and one differential output driver. The refer-
enced input buffer can also be configured as a differential input. In these banks the two pads in the pair are
described as “true” and “comp”, where the true pad is associated with the positive side of the differential I/O,
and the comp (complementary) pad is associated with the negative side of the differential I/O.
Only the left and right banks have LVDS differential output drivers. See the IDK specification for I/O leakage cur-
rent during power-up.
V
REF1(2)
GND
Bank
2
V
CCIO2
V
REF2(2)
V
REF1(3)
GND
Bank
3
V
CCIO3
V
REF2(3)
V
REF1(7)
GND
TOP
LEFT
RIGHT
BOTTOM
Bank
7
V
CCIO7
V
REF2(7)
V
REF1(6)
GND
Bank
6
V
CCIO6
V
REF2(6)
V
REF1(5)
GND
Bank 5
V
CCIO5
V
REF2(5)
V
REF1(4)
GND
Bank 4
V
CCIO4
V
REF2(4)
V
REF1(0)
GND
Bank 0
V
CCIO0
V
REF2(0)
V
REF1(1)
GND
Bank 1
V
CCIO1
V
REF2(1)
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相关代理商/技术参数
参数描述
LFEC10E-3FN256I 功能描述:FPGA - 现场可编程门阵列 10.2K LUTs 195 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC10E-3FN484C 功能描述:FPGA - 现场可编程门阵列 10.2K LUTs Pb-Free RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC10E-3FN484I 功能描述:FPGA - 现场可编程门阵列 10.2K LUTs 288 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC10E-3FN672C 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFEC10E-3FN672I 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
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