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参数资料
型号： LFEC6E-3QN208C
厂商： Lattice Semiconductor Corporation
文件页数： 92/163页
文件大小： 0K
描述： IC FPGA 6.1KLUTS 147I/O 208-PQFP
标准包装： 24
系列： EC
逻辑元件/单元数： 6100
RAM 位总计： 94208
输入/输出数： 147
电源电压： 1.14 V ~ 1.26 V
安装类型： 表面贴装
工作温度： 0°C ~ 85°C
封装/外壳： 208-BFQFP
供应商设备封装： 208-PQFP（28x28）
2-31
Architecture
LatticeECP/EC Family Data Sheet
Table 2-14. Supported Output Standards
Hot Socketing
The LatticeECP/EC devices have been carefully designed to ensure predictable behavior during power-up and
power-down. Power supplies can be sequenced in any order. During power up and power-down sequences, the
I/Os remain in tristate until the power supply voltage is high enough to ensure reliable operation. In addition,
leakage into I/O pins is controlled within specified limits, this allows for easy integration with the rest of the sys-
tem. These capabilities make the LatticeECP/EC ideal for many multiple power supply and hot-swap applica-
tions.
Configuration and Testing
The following section describes the configuration and testing features of the LatticeECP/EC devices.
IEEE 1149.1-Compliant Boundary Scan Testability
All LatticeECP/EC devices have boundary scan cells that are accessed through an IEEE 1149.1 compliant test
access port (TAP). This allows functional testing of the circuit board, on which the device is mounted, through a
serial scan path that can access all critical logic nodes. Internal registers are linked internally, allowing test data to
Output Standard
Drive
VCCIO (Nom.)
Single-ended Interfaces
LVTTL
4mA, 8mA, 12mA, 16mA, 20mA
3.3
LVCMOS33
4mA, 8mA, 12mA 16mA, 20mA
3.3
LVCMOS25
4mA, 8mA, 12mA, 16mA, 20mA
2.5
LVCMOS18
4mA, 8mA, 12mA, 16mA
1.8
LVCMOS15
4mA, 8mA
1.5
LVCMOS12
2mA, 6mA
1.2
LVCMOS33, Open Drain
4mA, 8mA, 12mA 16mA, 20mA
—
LVCMOS25, Open Drain
4mA, 8mA, 12mA 16mA, 20mA
—
LVCMOS18, Open Drain
4mA, 8mA, 12mA 16mA
—
LVCMOS15, Open Drain
4mA, 8mA
—
LVCMOS12, Open Drain
2mA, 6mA
—
PCI33
N/A
3.3
HSTL18 Class I, II, III
N/A
1.8
HSTL15 Class I, III
N/A
1.5
SSTL3 Class I, II
N/A
3.3
SSTL2 Class I, II
N/A
2.5
SSTL18 Class I
N/A
1.8
Differential Interfaces
Differential SSTL3, Class I, II
N/A
3.3
Differential SSTL2, Class I, II
N/A
2.5
Differential SSTL18, Class I
N/A
1.8
Differential HSTL18, Class I, II, III
N/A
1.8
Differential HSTL15, Class I, III
N/A
1.5
LVDS
N/A
2.5
BLVDS
1
N/A
2.5
LVPECL
1
N/A
3.3
RSDS
1
N/A
2.5
1. Emulated with external resistors.
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相关代理商/技术参数
参数描述
LFEC6E-3QN208I 功能描述:FPGA - 现场可编程门阵列 6.1 LUT 147 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC6E-3T100C 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFEC6E-3T100I 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFEC6E-3T144C 功能描述:FPGA - 现场可编程门阵列 1.2V 97 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC6E-3T144I 功能描述:FPGA - 现场可编程门阵列 6.1 LUT 97 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
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