参数资料
型号: LIS2L02AQ-TR
厂商: STMICROELECTRONICS
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, QCC44
封装: 7 X 7 MM, 1.80 MM HEIGHT, PLASTIC, QFN-44
文件页数: 5/10页
文件大小: 237K
代理商: LIS2L02AQ-TR
LIS2L02AQ
4/9
Notes: 1. Typical specifications are not guaranteed
2. Offset and sensitivity are essentially ratiometric to supply voltage
3. Guaranteed by wafer level test and measurement of initial offset and sensitivity
4. Guaranteed by design through measurements done up to 1g
5. Contribution to the measuring output of the inclination/acceleration along the perpendicular axis
6. Guaranteed by design
7. Self test “output voltage delta change” is defined as Vout(Vst=Logic1)-Vout(Vst=Logic0)
8. Self test “output voltage delta change” varies cubically with supply voltage
9. When full-scale is set to 6g, self-test “output delta change” is one third of the specified value
10.Bandwidth=1/(2*
π*110K*Cload)
ABSOLUTE MAXIMUM RATING
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
Table 3. Absolute Maximum Rating
Cload
Capacitive load drive10
320
pF
Ton
Turn-On Time at exit from
Power Down mode
Cload in
F
550*Cload
+0.3
ms
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply voltage
-0.3 to 7
V
Vin
Input voltage on any control pin (FS, PD, ST)
-0.3 to Vdd +0.3
V
APOW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
AUNP
Acceleration (Any axis, Unpowered)
3000g for 0.5 ms
10000g for 0.1 ms
TOP
Operating Temperature Range
-40 to +85
°C
TSTG
Storage Temperature Range
-40 to +105
°C
ESD
Electrostatic discharge protection
2KV HBM
Table 2. Electrical Characteristics (continued)
(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless
otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.1
Max.
Unit
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