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| 型号： | LIS2L06AL |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PBGA8 |
| 封装： | 5 X 5 MM, 1.60 MM HEIGHT, PLASTIC, LGA-8 |
| 文件页数： | 15/17页 |
| 文件大小： | 202K |
| 代理商： | LIS2L06AL |
LIS2L06AL
Mechanical and electrical specifications
7/17
2.3
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
2.4
Terminology
Sensitivity describes the gain of the sensor and can be determined by applying 1g
acceleration to it. As the sensor can measure DC accelerations this can be done easily by
pointing the axis of interest towards the center of the earth, note the output value, rotate the
sensor by 180 degrees (point to the sky) and note the output value again thus applying ±1g
acceleration to the sensor. Subtracting the larger output value from the smaller one and
dividing the result by 2 will give the actual sensitivity of the sensor. This value changes very
little over temperature (see sensitivity change vs. temperature) and also very little over time.
The Sensitivity Tolerance describes the range of Sensitivities of a large population of
sensors.
Zero-g level describes the actual output signal if there is no acceleration present. A sensor
in a steady state on a horizontal surface will measure 0g in X axis and 0g in Y axis. The
output is ideally for a 3.3V powered sensor Vdd/2 = 1650mV. A deviation from ideal 0-g level
(1650mV in this case) is called Zero-g offset. Offset of precise MEMS sensors is to some
extend a result of stress to the sensor and therefore the offset can slightly change after
mounting the sensor onto a printed circuit board or exposing it to extensive mechanical
stress. Offset changes little over temperature - see “Zero-g level change vs. temperature” -
the Zero-g level of an individual sensor is very stable over lifetime. The Zero-g level
tolerance describes the range of Zero-g levels of a population of sensors.
Table 4.
Absolute maximum ratings
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply voltage
-0.3 to 7
V
Vin
Input Voltage on Any Control pin (ST, FS)
-0.3 to Vdd +0.3
V
APOW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
AUNP
Acceleration (Any axis, Not powered)
3000g for 0.5 ms
10000g for 0.1 ms
TSTG
Storage Temperature Range
-40 to +125
°C
ESD
Electrostatic Discharge Protection
2kV HBM
200V MM
1500V CDM
This is a Mechanical Shock sensitive device, improper handling can cause permanent
damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages to
the part
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相关代理商/技术参数 |
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|---|---|
| LIS2L06AL_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:MEMS INERTIAL SENSOR:2-axis - +/- 2g/6g ultracompact linear accelerometer |
| LIS2L06ALTR | 功能描述:加速计 - 板上安装 MEMS INERTIAL snsr 2 axis RoHS:否 制造商:Murata 传感轴:Double 加速:12 g 灵敏度: 封装 / 箱体: 输出类型:Analog 数字输出 - 位数:11 bit 电源电压-最大:5.25 V 电源电压-最小:4.75 V 电源电流:4 mA 最大工作温度:+ 125 C 最小工作温度:- 40 C |
| LIS2MDLTR | 功能描述:ULTRA-COMPACT HIGH-PERFORMANCE E 制造商:stmicroelectronics 系列:- 零件状态:在售 类型:罗盘/磁力计 技术:磁阻 轴:X，Y，Z 输出类型:I2C，SPI 电压 - 电源:1.71 V ~ 3.6 V 分辨率:16 b 带宽:5Hz ~ 50Hz 工作温度:-40°C ~ 85°C（TA） 特性:可选数值范围 封装/外壳:12-VFLGA 供应商器件封装:12-LGA（2x2） 标准包装:1 |
| LIS302ALB | 功能描述:加速计 - 板上安装 MEMS motion snsr 3 axis RoHS:否 制造商:Murata 传感轴:Double 加速:12 g 灵敏度: 封装 / 箱体: 输出类型:Analog 数字输出 - 位数:11 bit 电源电压-最大:5.25 V 电源电压-最小:4.75 V 电源电流:4 mA 最大工作温度:+ 125 C 最小工作温度:- 40 C |
| LIS302ALBTR | 功能描述:加速计 - 板上安装 MEMS Motion Sensor RoHS:否 制造商:Murata 传感轴:Double 加速:12 g 灵敏度: 封装 / 箱体: 输出类型:Analog 数字输出 - 位数:11 bit 电源电压-最大:5.25 V 电源电压-最小:4.75 V 电源电流:4 mA 最大工作温度:+ 125 C 最小工作温度:- 40 C |
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