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| 型号： | LM3421-SEPICEV/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 6/67页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR LM3421 |
| 标准包装： | 1 |
| 系列： | PowerWise® |
| 电流 - 输出 / 通道： | 350mA |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 18.9V |
| 特点： | 可调光 |
| 输入电压： | 8 ~ 18 V |
| 已供物品： | 板，文档 |
| 已用 IC / 零件： | LM3421 |
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SNVS574E – JULY 2008 – REVISED MAY 2013
Electrical Characteristics (1) (continued)
Specifications in standard type face are for T J = 25°C and those with boldface type apply over the full Operating
Temperature Range ( T J = ? 40°C to +150°C for LM3421Q0/LM3423Q0, T J = ? 40°C to +125°C for all others). Specifications
that differ between the two operating ranges will be identified in the Temp Range column as Q0 for T J = ? 40°C to +150°C
and as Q1 for T J = ? 40°C to +125°C. If no temperature range is indicated then the specification holds for both Q1 and Q0.
Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most
likely parametric norm at T J = +25°C, and are provided for reference purposes only. Unless otherwise stated the following
condition applies: V IN = +14V.
Symbol
Parameter
Conditions
Temp
Range
Min (2)
Typ (3)
Max (2)
Units
ERROR AMPLIFIER
V REF
CSH Reference Voltage
With Respect to AGND
1.210
1.235
1.260
V
Error Amplifier Input Bias
Current
-0.6
0
0.6
COMP Sink / Source Current
Q1
Q0
22
30
35
36
μA
Transconductance
100
μA/V
Linear Input Range
(4)
±125
mV
Transconductance Bandwidth
-6dB Unloaded Response
(4)
0.5
1.0
MHz
OFF TIMER
Minimum Off-time
RCT = 1V through
1 k ?
Q1
Q0
35
75
90
ns
R RCT
RCT Reset Pull-down
Resistance
Q1
Q0
36
120
125
?
V RCT
V IN /25 Reference Voltage
V IN = 14V
Q1
Q0
540
565
585
590
mV
f
Continuous Conduction
Switching Frequency
2.2 nF > C T > 470 pF
25/(C T R T )
Hz
PWM COMPARATOR
COMP to PWM Offset
700
800
900
mV
CURRENT LIMIT (IS)
I LIM
Current Limit Threshold
I LIM Delay to Output
Leading Edge Blanking Time
Q1
Q0
215
115
245
35
210
275
75
90
325
mV
ns
HIGH SIDE TRANSCONDUCTANCE AMPLIFIER
Input Bias Current
11.5
μA
Transconductance
20
119
mA/V
Input Offset Current
Input Offset Voltage
-1.5
-7
0
0
1.5
7
μA
mV
Transconductance Bandwidth
I CSH = 100 μA
(4)
250
500
kHz
GATE DRIVER (GATE)
R SRC(GATE)
R SNK(GATE)
GATE Sourcing Resistance
GATE Sinking Resistance
GATE = High
GATE = Low
2.0
1.3
6.0
4.5
?
DIM DRIVER (DIM, DDRV)
nDIM VTH
nDIM / UVLO Threshold
1.185
1.240
1.285
V
nDIM HYS
R SRC(DDRV)
R SNK(DDRV)
nDIM Hysteresis Current
DDRV Sourcing Resistance
DDRV Sinking Resistance
DDRV = High
DDRV = Low
Q1
Q0
20
23
13.5
3.5
25
26
30.0
10.0
μA
?
(4)
These electrical parameters are specified by design, and are not verified by test.
6
Copyright ? 2008–2013, Texas Instruments Incorporated
Product Folder Links: LM3421 LM3421-Q1 LM3423 LM3423-Q1
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