参数资料
型号: LM3423MHBSTEVAL/NOPB
厂商: National Semiconductor
文件页数: 15/67页
文件大小: 0K
描述: BOARD EVAL BOOST FOR LM3423
标准包装: 1
系列: PowerWise®
电流 - 输出 / 通道: 1A
输出及类型: 1,非隔离
输出电压: 35V
特点: 可调光
输入电压: 4.5 ~ 35 V
已供物品:
已用 IC / 零件: LM3423
其它名称: LM3423MHBSTEVAL
SNVS574E – JULY 2008 – REVISED MAY 2013
Method 2 provides a complete dimming range and better noise performance, though it is more complex. It
consists of a PNP current mirror and a bias network consisting of an NPN, 2 resistors and a potentiometer
(R ADJ ), where R ADJ controls the amount of current sourced into the CSH pin. A higher resistance value will source
more current into the CSH pin causing less regulated signal current through R HSP , effectively dimming the LEDs.
V REF should be a precise external voltage reference, while Q7 and Q8 should be a dual pair PNP for best
matching and performance. The additional current (I ADD ) sourced into the CSH pin can be calculated:
§ R ADJ x V REF ·
¨ R
I ADD =
? - V BE-Q6
? ADJ + R MAX 1
R BIAS
(12)
The corresponding I LED for a specific I ADD is:
§ R HSP ·
I LED = (I CSH - I ADD ) x ¨ ?
? R SNS 1
(13)
CURRENT SENSE/CURRENT LIMIT
The LM3421/23 achieves peak current mode control using a comparator that monitors the main MosFET (Q1)
transistor current, comparing it with the COMP pin voltage as shown in Figure 20 . Further, it incorporates a
cycle-by-cycle over-current protection function. Current limit is accomplished by a redundant internal current
sense comparator. If the voltage at the current sense comparator input (IS) exceeds 245 mV (typical), the on
cycle is immediately terminated. The IS input pin has an internal N-channel MosFET which pulls it down at the
conclusion of every cycle. The discharge device remains on an additional 210 ns (typical) after the beginning of a
new cycle to blank the leading edge spike on the current sense signal. The leading edge blanking (LEB)
determines the minimum achievable on-time (t ON-MIN ).
R DS-ON
Sensing
LM3421/23
I T
Q1
R LIM
Sensing
R LIM
GATE
IS
0.8V
COMP
0.245V
PWM
LEB
PGND
Figure 20. Current Sense / Current Limit Circuitry
There are two possible methods to sense the transistor current. The R DS-ON of the main power MosFET can be
used as the current sense resistance because the IS pin was designed to withstand the high voltages present on
the drain when the MosFET is in the off state. Alternatively, a sense resistor located in the source of the MosFET
may be used for current sensing, however a low inductance (ESL) type is suggested. The cycle-by-cycle current
limit (I LIM ) can be calculated using either method as the limiting resistance (R LIM ):
I LIM =
245 mV
R LIM
(14)
Copyright ? 2008–2013, Texas Instruments Incorporated
15
Product Folder Links: LM3421 LM3421-Q1 LM3423 LM3423-Q1
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