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参数资料
| 型号： | LM385BYM-1.2X |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 基准电压源/电流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235 V, PDSO8 |
| 封装： | SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 294K |
| 代理商： | LM385BYM-1.2X |
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Reverse Current
30mA
Forward Current
10mA
Operating Temperature Range (Note 3)
LM185-1.2
55°C to +125°C
LM285-1.2
40°C to +85°C
LM385-1.2
0°C to 70°C
ESD Susceptibility (Note 9)
2kV
Storage Temperature
55°C to +150°C
Soldering Information
TO-92 package: 10 sec.
260°C
TO-46 package:10 sec.
300°C
SO and SOT Pkg.
Vapor phase (60 sec.)
215°C
Infrared (15 sec.)
220°C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Electrical Characteristics (Note 4)
LM185-1.2
LM185BX-1.2
LM385B-1.2
LM185BY-1.2
LM385BX-1.2
LM385-1.2
LM285-1.2
LM385BY-1.2
Units
Parameter
Conditions
Typ
LM285BX-1.2
(Limit)
LM285BY-1.2
Tested
Design
Tested
Design
Tested
Design
Limit
(Notes 5,
(Note 6)
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Reverse Breakdown
T
A = 25°C,
1.23
5
1.223
1.205
V(Min)
Voltage
10μA
≤ I
R ≤ 20mA
1.247
1.260
V(Max)
Minimum Operating
8
10
20
15
20
15
20
μA
Current
LM385M3-1.2
10
15
(Max)
Reverse Breakdown
10μA
≤ I
R ≤ 1mA
1
1.5
1
1.5
1
1.5
mV
Voltage Change
(Max)
with Current
1mA
≤ I
R ≤ 20mA
10
20
20
25
20
25
mV
(Max)
Reverse Dynamic
I
R = 100μA, f = 20Hz
1
Ω
Impedance
Wideband Noise
I
R = 100μA,
60
μV
(rms)
10Hz
≤ f ≤ 10kHz
Long Term Stability
I
R = 100μA, T = 1000 Hr,
20
ppm
T
A = 25°C ±0.1°C
Average Temperature I
R = 100μA
Coefficient (Note 7)
X Suffix
30
ppm/°C
Y Suffix
50
ppm/°C
All Others
150
ppm/°C
(Max)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device
is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed.
Note 2:
Refer to RETS185H-1.2 for military specifications.
Note 3:
For elevated temperature operation, T
j max is:
LM185
150°C
LM285
125°C
LM385
100°C
www.national.com
2
LM185-1.2/LM285-1.2/LM385-1.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LM385BYM-2.5 | 制造商:Texas Instruments 功能描述: |
| LM385BYM-2.5 NOPB | 制造商:National Semiconductor 功能描述:V-Ref Precision 2.5V 20mA 8-Pin SOIC N Rail |
| LM385BYM-2.5/NOPB | 功能描述:基准电压& 基准电流 RoHS:否 制造商:STMicroelectronics 产品:Voltage References 拓扑结构:Shunt References 参考类型:Programmable 输出电压:1.24 V to 18 V 初始准确度:0.25 % 平均温度系数（典型值）:100 PPM / C 串联 VREF - 输入电压（最大值）: 串联 VREF - 输入电压（最小值）: 分流电流（最大值）:60 mA 最大工作温度:+ 125 C 封装 / 箱体:SOT-23-3L 封装:Reel |
| LM385BYMX-1.2 | 功能描述:基准电压& 基准电流 RoHS:否 制造商:STMicroelectronics 产品:Voltage References 拓扑结构:Shunt References 参考类型:Programmable 输出电压:1.24 V to 18 V 初始准确度:0.25 % 平均温度系数（典型值）:100 PPM / C 串联 VREF - 输入电压（最大值）: 串联 VREF - 输入电压（最小值）: 分流电流（最大值）:60 mA 最大工作温度:+ 125 C 封装 / 箱体:SOT-23-3L 封装:Reel |
| LM385BYMX-1.2 NOPB | 制造商:National Semiconductor 功能描述:V-Ref Precision 1.235V 20mA 8-Pin SOIC N T/R |
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