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参数资料
| 型号： | LM4040ETB-330GT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 基准电压源/电流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3.3 V, PDSO3 |
| 封装： | HALOGEN FREE, BFR FREE AND ROHS COMPLIANT, TO-236, SOT-23, 3 PIN |
| 文件页数： | 11/15页 |
| 文件大小： | 159K |
| 代理商： | LM4040ETB-330GT3 |
LM4040, LM4041
http://onsemi.com
5
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = 40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Symbol
Units
Limits
Test Conditions
Parameter
Symbol
Units
Max
Typ
Min
Test Conditions
Parameter
3.000 V
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.4
0.9
W
LM4040C
0.4
0.9
LM4040D, E
0.4
1.2
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
3.300 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
3.297
3.300
3.303
V
LM4040B (0.2%)
3.294
3.300
3.306
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040C (0.5%)
3.285
3.300
3.315
V
LM4040D (1.0%)
3.270
3.300
3.330
VR
Reverse Breakdown Voltage
Tolerance
LM4040A
±3
±22
mV
LM4040B
±6
±26
LM4040C
±15
±34
LM4040D
±30
±59
IR_MIN
Minimum Operating Current
45
65
mA
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
±20
ppm/°C
IR = 1 mA
LM4040A, B, C
±15
±100
LM4040D
±15
±150
IR = 100 mA
±15
DVR/DIR
Reverse Breakdown Voltage
Change with Operating Current
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.3
1.0
mV
LM4040D
0.3
1.2
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
2.5
8
LM4040D
2.5
10
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.3
0.8
W
LM4040C
0.3
0.9
LM4040D
0.3
1.1
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
4.096 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
4.092
4.096
4.100
V
LM4040B (0.2%)
4.088
4.096
4.104
LM4040C (0.5%)
4.080
4.096
4.120
LM4040D (1.0%)
4.055
4.096
4.137
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature 40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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