参数资料
型号: LM4041DSD-122GT3
厂商: ON SEMICONDUCTOR
元件分类: 基准电压源/电流源
英文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.225 V, PDSO5
封装: 1.25 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-203, SC-70, SC-88A, 5 PIN
文件页数: 9/15页
文件大小: 159K
代理商: LM4041DSD-122GT3
LM4040, LM4041
http://onsemi.com
3
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = 40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Symbol
Parameter
Test Conditions
Limits
Units
Min
Typ
Max
1.225 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4041A (0.1%)
1.2238
1.225
1.2262
V
LM4041B (0.2%)
1.2226
1.225
1.2274
LM4041C (0.5%)
1.219
1.225
1.231
LM4041D (1.0%)
1.213
1.225
1.237
LM4041E (2.0%)
1.200
1.225
1.250
VR
Reverse Breakdown Voltage
Tolerance
LM4041A
±1.2
±9.2
mV
LM4041B
±2.4
±10.4
LM4041C
±6
±14
LM4041D
±12
±24
LM4041E
±25
±36
IR_MIN
Minimum Operating Current
45
65
mA
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
±20
ppm/°C
IR = 1 mA
LM4041A, B, C
±15
±100
LM4041D, E
±15
±150
IR = 100 mA
±15
DVR/DIR
Reverse Breakdown Voltage
Change with Operating Current
IR_MIN ≤ IR
1 mA
LM4041A, B, C
0.7
2.0
mV
LM4041D, E
0.7
2.5
1 mA ≤ IR
15 mA
LM4041A, B, C
2.5
8
LM4041D, E
2.5
10
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4041A, B
0.5
1.5
W
LM4041C
0.5
1.5
LM4041D, E
0.5
2.0
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
200
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
2.500 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
2.498
2.500
2.502
V
LM4040B (0.2%)
2.496
2.500
2.504
LM4040C (0.5%)
2.490
2.500
2.510
LM4040D (1.0%)
2.475
2.500
2.525
LM4040E (2.0%)
2.450
2.500
2.550
VR
Reverse Breakdown Voltage
Tolerance
LM4040A
±2
±19
mV
LM4040B
±4
±21
LM4040C
±10
±29
LM4040D
±25
±49
LM4040E
±50
±74
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature 40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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