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参数资料
| 型号： | LM4431-2.5MWC |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 基准电压源/电流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, UUC |
| 封装： | WAFER |
| 文件页数： | 3/10页 |
| 文件大小： | 169K |
| 代理商： | LM4431-2.5MWC |
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
20 mA
Forward Current
10 mA
Power Dissipation (T
A = 25C) (Note 2)
M3 Package
306 mW
Storage Temperature
65C to +150C
Lead Temperature
M3 Package
Vapor phase (60 seconds)
+215C
Infrared (15 seconds)
+220C
ESD Susceptibility
Human Body Model (Note 3)
2 kV
Machine Model (Note 3)
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Operating Ratings(Notes 1, 2)
Temperature Range
(T
min ≤ TA ≤ Tmax)
0C
≤ T
A ≤ +70C
Reverse Current
LM4431-2.5
100 A to 15 mA
LM4431-2.5
Electrical Characteristics
Boldface limits apply for T
A = TJ = TMIN to TMAX; all other limits TA = TJ = 25C.
Symbol
Parameter
Conditions
Typical
LM4431M3
Units
(Note 4)
Limits
(Limit)
(Note 5)
V
R
Reverse Breakdown Voltage
I
R = 100 A
2.500
V
Reverse Breakdown
VoltageTolerance
I
R = 100 A
±50
mV (max)
I
RMIN
Minimum Operating Current
45
A
100
A (max)
V
R/T
Average Reverse Breakdown
I
R = 10 mA
±30
ppm/C
Voltage Temperature
I
R = 1mA
±30
ppm/C
Coefficient
I
R = 100 A
±30
ppm/C
V
R/IR
Reverse Breakdown Voltage
I
RMIN ≤ IR ≤ 1 mA
0.4
mV
Change with Operating
1.0
mV (max)
Current Change
1.2
mV (max)
1mA
≤ I
R ≤ 15 mA
2.5
mV
8.0
mV (max)
25
mV (max)
Z
R
Reverse Dynamic Impedance
I
R = 1 mA, f = 120 Hz
1.0
I
AC = 0.1 IR
e
N
Wideband Noise
I
R = 100 A
35
V
rms
10 Hz
≤ f ≤ 10 kHz
V
R
Reverse Breakdown Voltage
t = 1000 hrs
Long Term Stability
T = 25C ±0.1C
120
ppm
I
R = 100 A
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci-
fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to am-
bient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax TA)/θJA or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM4431, TJmax = 125C, and the typical thermal resistance (θJA), when board mounted, is
326C/W for the SOT-23 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
resistor into each pin. The machine model is a 200 pF capacitor discharged di-
rectly into each pin.
Note 4: Typicals are at TJ = 25C and represent most likely parametric norm.
Note 5: Limits are 100% production tested at 25C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
www.national.com
2
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