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参数资料
| 型号： | LM4868LQX/NOPB |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 3 W, 2 CHANNEL, AUDIO AMPLIFIER, PQCC24 |
| 封装： | EXPOSED PAD, PLASTIC, LLP-24 |
| 文件页数： | 23/28页 |
| 文件大小： | 792K |
| 代理商： | LM4868LQX/NOPB |
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Electrical Characteristics for Bridged-Mode Operation (Notes 3, 11) (Continued)
The following specifications apply for V
DD= 5V unless otherwise specified. Limits apply for TA= 25C.
Symbol
Parameter
Conditions
LM4868
Units
(Limits)
Typical
Limit
THD+N
Total Harmonic Distortion+Noise
20Hz
≤ f ≤ 20kHz, A
VD =2
LM4868MTE, R
L =4
,P
O =2W
LM4868LQ, R
L =4
,P
O =2W
LM4868, R
L =8
,P
O =1W
0.3
%
PSRR
Power Supply Rejection Ratio
V
DD = 5V, VRIPPLE = 200 mVRMS,RL =8
,
C
B = 2.2F
67
dB
X
TALK
Channel Separation
f = 1 kHz, C
B = 2.2F
80
dB
SNR
Signal To Noise Ratio
V
DD = 5V, PO = 1.1W, RL =8
97
dB
Electrical Characteristics for Single-Ended Operation (Notes 3, 11)
The following specifications apply for V
DD= 5V unless otherwise specified. Limits apply for TA= 25C.
Symbol
Parameter
Conditions
LM4868
Units
(Limits)
Typical
Limit
V
OS
Output Offset Voltage
V
IN = 0V
5
50
mV (max)
P
O
Output Power
THD = 0.5%, f = 1kHz, R
L =32
85
75
mW (min)
THD+N = 1%, f = 1kHz, R
L =8
180
mW
THD+N = 1%, f = 1kHz, R
L =16
THD+N = 1%, f = 1kHz, R
L =32
THD+N = 10%, f = 1kHz, R
L =16
THD+N = 10%, f = 1kHz, R
L =32
165
88
208
114
mW
V
OUT
Output Voltage Swing
THD = 0.05%, R
L =5k
1V
P-P
THD+N
Total Harmonic Distortion+Noise
A
V = 1, PO = 75mW, 20 Hz
≤ f ≤ 20kHz,
R
L =32
0.2
%
PSRR
Power Supply Rejection Ratio
C
B = 2.2F, VRIPPLE = 200mVRMS,
f = 1kHz
52
dB
X
TALK
Channel Separation
f = 1kHz, C
B = 2.2F
60
dB
SNR
Signal To Noise Ratio
V
DD = 5V, PO = 340mW, RL =8
94
dB
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device operates within the Operating Ratings. Specifications are not guaranteed for parameters where
no limit is given. The typical value however, is a good indication of device performance.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum
allowable power dissipation is PDMAX =(TJMAX TA)/θJA. For the LM4868, TJMAX = 150C. For the θJAs for different packages, please see the Application
Information section or the Absolute Maximum Ratings section.
Note 5: Human body model, 100pF discharged through a 1.5k
resistor.
Note 6: Machine model, 220pF–240pF discharged through all pins.
Note 7: The given
θJA is for an LM4868 packaged in an MXA20A with the Exposed-DAP soldered to an exposed 2in2 area of 1oz printed circuit board copper.
Note 8: The given
θJA is for an LM4868 packaged in an MXA20A with the Exposed-DAP soldered to an exposed 1in2 area of 1oz printed circuit board copper.
Note 9: The given
θJA is for an LM4868 packaged in an MXA20A with the Exposed-DAP not soldered to printed circuit board copper.
Note 10: The given
θJA is for an LM4868 packaged in an LQA24A with the Exposed-DAP soldered to an exposed 2in2 area of 1oz printed circuit board copper.
Note 11: All voltages are measured with respect to the ground (GND) pins, unless otherwise specified.
Note 12: Typicals are measured at 25C and represent the parametric norm.
Note 13: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Datasheet min/max specification limits are guaranteed by design, test, or
statistical analysis.
Note 14: The quiescent power supply current depends on the offset voltage when a practical load is connected to the amplifier.
Note 15: Output power is measured at the device terminals.
Note 16: When driving 3
or 4 loads and operating on a 5V supply, the LM4868LQ and LM4868MTE must be mounted to a circuit board that has a minimum of
2.5in2 of exposed, uniterrupted copper area connected to the LLP or TSSOP package’s exposed DAP.
Note 17: See Application Information section ’Single-Ended Output Power Performance and Measurement Considerations’ for more information.
LM4868
www.national.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LM4868MT | 制造商:NSC 制造商全称:National Semiconductor 功能描述:Output-Transient-Free Dual 2.1W Audio Amplifier Plus No Coupling Capacitor Stereo Headphone Function |
| LM4868MT/NOPB | 功能描述:IC AMP AUDIO PWR 3W AB 20TSSOP RoHS:是 类别:集成电路 (IC) >> 线性 - 音頻放大器 系列:Boomer® 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:DirectDrive® 类型:H 类 输出类型:耳机，2-通道（立体声） 在某负载时最大输出功率 x 通道数量:35mW x 2 @ 16 欧姆 电源电压:1.62 V ~ 1.98 V 特点:I²C，麦克风，静音，短路保护，音量控制 安装类型:表面贴装 供应商设备封装:25-WLP（2.09x2.09） 封装/外壳:25-WFBGA，WLCSP 包装:带卷 (TR) |
| LM4868MTE | 制造商:NSC 制造商全称:National Semiconductor 功能描述:Output-Transient-Free Dual 2.1W Audio Amplifier Plus No Coupling Capacitor Stereo Headphone Function |
| LM4868MTE/NOPB | 功能描述:IC AMP AUDIO PWR 3W AB 20TSSOP RoHS:是 类别:集成电路 (IC) >> 线性 - 音頻放大器 系列:Boomer® 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:DirectDrive® 类型:H 类 输出类型:耳机，2-通道（立体声） 在某负载时最大输出功率 x 通道数量:35mW x 2 @ 16 欧姆 电源电压:1.62 V ~ 1.98 V 特点:I²C，麦克风，静音，短路保护，音量控制 安装类型:表面贴装 供应商设备封装:25-WLP（2.09x2.09） 封装/外壳:25-WFBGA，WLCSP 包装:带卷 (TR) |
| LM4869 | 制造商:NSC 制造商全称:National Semiconductor 功能描述:1.9W Differential Input, BTL Output Stereo Audio Amplifier with Selectable Gain and Shutdown |
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