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参数资料
| 型号： | LMH6642MFXEP/NOPB |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO5 |
| 封装： | PLASTIC, SOT-23, 5 PIN |
| 文件页数： | 12/21页 |
| 文件大小： | 966K |
| 代理商： | LMH6642MFXEP/NOPB |
Absolute Maximum Ratings (Note 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
2KV (Note 5)
200V (Note 12)
V
IN Differential
±2.5V
Output Short Circuit Duration
Supply Voltage (V
+ -V)
13.5V
Voltage at Input/Output pins
V
+ +0.8V, V 0.8V
Input Current
±10mA
Storage Temperature Range
65C to +150C
Junction Temperature (Note 7)
+150C
Soldering Information
Infrared or Convection Reflow(20 sec)
235C
Wave Soldering Lead Temp.(10 sec)
260C
Operating Ratings (Note 4)
Supply Voltage (V
+ –V)
2.7V to 12.8V
Junction Temperature Range (Note 7)
40C to +85C
Package Thermal Resistance (Note 7) (
θ
JA)
SOT23-5
265C/W
SOIC-8
190C/W
MSOP-8
235C/W
SOIC-14
145C/W
TSSOP-14
155C/W
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
J = 25C, V
+ = 3V, V = 0V, V
CM =VO =V
+/2, and R
L =2k
to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BW
3dB BW
A
V = +1, VOUT = 200mVPP
80
115
MHz
A
V = +2, 1, VOUT = 200mVPP
46
BW
0.1dB
0.1dB Gain Flatness
A
V = +2, RL = 150
to V+/2,
R
L = 402
,V
OUT = 200mVPP
19
MHz
PBW
Full Power Bandwidth
A
V = +1, 1dB, VOUT =1VPP
40
MHz
e
n
Input-Referred Voltage Noise
f = 100kHz
17
nV/
f = 1kHz
48
i
n
Input-Referred Current Noise
f = 100kHz
0.90
pA/
f = 1kHz
3.3
THD
Total Harmonic Distortion
f = 5MHz, V
O =2VPP,AV = 1,
R
L = 100
to V+/2
48
dBc
DG
Differential Gain
V
CM = 1V, NTSC, AV =+2
R
L =150
to V+/2
0.17
%
R
L =1k
to V+/2
0.03
DP
Differential Phase
V
CM = 1V, NTSC, AV =+2
R
L =150
to V+/2
0.05
deg
R
L =1k
to V+/2
0.03
CT Rej.
Cross-Talk Rejection
f = 5MHz, Receiver:
R
f =Rg = 510
,A
V =+2
47
dB
T
S
Settling Time
V
O =2VPP, ±0.1%, 8pF Load,
V
S =5V
68
ns
SR
Slew Rate (Note 11)
A
V = 1, VI =2VPP
90
120
V/s
V
OS
Input Offset Voltage
±1
±5
±7
mV
TC V
OS
Input Offset Average Drift
±5
V/C
I
B
Input Bias Current
1.50
2.60
3.25
A
I
OS
Input Offset Current
20
800
1000
nA
R
IN
Common Mode Input
Resistance
3M
C
IN
Common Mode Input
Capacitance
2pF
LMH6642EP/LMH6643EP/LMH6644EP
Enhanced
Plastic
www.national.com
2
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相关代理商/技术参数 |
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| LMH6642Q | 制造商:TI 制造商全称:Texas Instruments 功能描述:Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers |
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| LMH6642QMF/NOPB | 功能描述:运算放大器 - 运放 Lo Pwr 130MHz 75mA R-R Output Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6642QMFX | 制造商:TI 制造商全称:Texas Instruments 功能描述:Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers |
| LMH6642QMFX/NOPB | 功能描述:运算放大器 - 运放 Lo Pwr 130MHz 75mA R-R Output Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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