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参数资料
| 型号： | LMH6644MAX/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 12/33页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP R-R LP 3V 75MA 14-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerWise® |
| 放大器类型： | 电压反馈 |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 135 V/µs |
| -3db带宽： | 130MHz |
| 电流 - 输入偏压： | 20nA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 2.7mA |
| 电流 - 输出 / 通道： | 75mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12.8 V，±1.35 V ~ 6.4 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | LMH6644MAX |
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AV = +1
AV = +5
AV = +10
AV = +2
10k
100k
1M
10M
100M 500M
-3
-2
-1
0
+1
+2
+3
N
O
R
MAL
IZ
ED
G
AI
N
(d
B
)
FREQUENCY (Hz)
VS = ±1.5V
RL = 2k
VOUT = 0.2VPP
100k
1M
10M
200M
FREQUENCY (Hz)
4.0
G
AI
N
(d
B
)
2.0
AV = +2
RF = RL = 2k
±5V
4VPP
±2.5V
2VPP
6.0
8.0
0.0
SNOS966P – MAY 2001 – REVISED MARCH 2013
Closed Loop Gain vs. Frequency for Various Gain
Large Signal Frequency Response
Figure 1.
Figure 2.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
ESD Tolerance
2KV (3)
200V (4)
1000V (5)
VIN Differential
±2.5V
Output Short Circuit Duration
See (6), (7)
Supply Voltage (V+ - V)
13.5V
Voltage at Input/Output pins
V+ +0.8V, V
0.8V
Input Current
±10mA
Storage Temperature Range
65°C to +150°C
Junction Temperature (8)
+150°C
Soldering Information
Infrared or Convection Reflow (20 sec)
235°C
Wave Soldering Lead Temp.(10 sec)
260°C
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2)
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3)
Human body model, 1.5k
in series with 100pF.
(4)
Machine Model, 0
in series with 200pF.
(5)
CDM: Charge Device Model
(6)
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(7)
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(8)
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
2
Copyright 2001–2013, Texas Instruments Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LMH6644MT | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6644MT/NOPB | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6644MTX | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6644MTX/NOPB | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6645 | 制造商:NSC 制造商全称:National Semiconductor 功能描述:2.7V, 650レA, 55MHz, Rail-to-Rail Input and Output Amplifiers with Shutdown Option |
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