参数资料
型号: LMH6702WG-QML/NOPB
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 音频/视频放大
英文描述: 1 CHANNEL, VIDEO AMPLIFIER, CDSO10
封装: CERAMIC, SOIC-10
文件页数: 7/13页
文件大小: 780K
代理商: LMH6702WG-QML/NOPB
LMH6702 Electrical Characteristics
DC Parameters (Note 4), (Note 5)
The following conditions apply, unless otherwise specified.
R
L = 100
,V
CC = ±5VDC,AV = +2 feedback resistor (RF) = 250
, gain resistor (R
G) = 250
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
I
BN
Input Bias Current,
Noninverting
-15
+15
A
1, 2
-21
+21
A
3
I
BI
Input Bias Current, Iverting
-30
+30
A
1, 2
-34
+34
A
3
V
IO
Input Offset Voltage
-4.5
+4.5
mV
1, 3
-6.0
+6.0
mV
2
I
CC
Supply Current, no load
R
L =
15
mA
1, 2, 3
PSSR
Power Supply Rejection Ratio
-V
CC = -4.5V to -5.0V,
+V
CC = +4.5V to +5.0V
45
dB
1, 2, 3
AC Parameters (Note 4), (Note 5)
The following conditions apply, unless otherwise specified.
R
L = 100
,V
CC = ±5VDC,AV = +2 feedback resistor (RF) = 250
, gain resistor (R
G) = 250
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
HD
3
3rd Harmonic Distortion
2V
PP at 20MHz
-62
dBc
4
GFPL
Gain Flatness Peaking
0.1MHz to 75MHz, V
O < 0.5VPP
0.4
dB
4
GFPH
Gain Flatness Peaking
> 75MHz, V
O < 0.5VPP
2.0
dB
4
GFRH
Gain Flatness Rolloff
75MHz to 125MHz, V
O<0.5VPP
0.2
dB
4
HD
2
2nd Harmonic Distortion
2V
PP at 20MHz
-52
dBc
4
Drift Values Parameters (Note 4)
The following conditions apply, unless otherwise specified.
R
L = 100
,V
CC = ±5VDC,AV = +2 feedback resistor (RF) = 250
, gain resistor (R
G) = 250
"Delta not required on B level
product. Delta required for S-level product at Group B5 only, or as specified on the Internal Processing Instruction (IPI)."
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
I
BN
Input Bias Current Noninverting
-0.3
+0.3
A
1
I
BI
Input Bias Current Inverting
-3.0
+3.0
A
1
V
IO
Input Offset Voltage
-0.3
+0.3
mV
1
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is functional,
but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics. The guaranteed specifications
apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction
to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax -TA)/θJA or the
number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 1.5k
in series with 100pF.
Note 4: The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table. Negative cur rent shall be
defined as convential current flow out of a device terminal.
Note 5: Pre and Post irradiation limits, up to 300k rd(Si) total ionizing dose, are identical to those listed under the AC and DC parameter tables above. Post
irradiation testing is conducted at room temperature, +25C, only. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.
Note 6: This parameter is not post irradiation tested.
LMH6702QML
www.national.com
3
相关PDF资料
PDF描述
LMH6702WG-QMLV 1 CHANNEL, VIDEO AMPLIFIER, CDSO10
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5962F0254601VPA 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
5962-0254601VZA 1 CHANNEL, VIDEO AMPLIFIER, CDSO10
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LMH6703MA/NOPB 功能描述:运算放大器 - 运放 1.2Ghz Op-Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
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