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参数资料
| 型号： | LMV8172T |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 偏转 |
| 英文描述： | VERTICAL DEFLECTION IC, PZFM7 |
| 文件页数： | 4/6页 |
| 文件大小： | 206K |
| 代理商： | LMV8172T |
Test Circuits (Continued)
Block Diagram
Application Hints
To get the best possible performance from the LMV8172T it
is important to use a good PCB layout and the correct com-
ponents. The 0.1 F and 470 F capacitors on the V
CC1 and
V
EE lines should be as close as possible to their pins. The
power traces should be wide and there should be no jumpers
between the capacitors and the LMV8172T. The value of the
electrolytic capacitors used on the V
CC1
and V
EE
lines
should be 470 F or greater. The ground traces should also
be as wide as possible. The diode and optional capacitor
should be located close to the LMV8172T. The diode should
be a fast-recovery type, the 1N4937 recommended has a t
rr
of 150 ns. The capacitor is optional, it may be needed in
some PCB layouts. A suggested layout is shown in
Figure 6.
DS100010-4
FIGURE 4.
DS100010-5
FIGURE 5.
www.national.com
4
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