参数资料
型号: LMV821M5X/NOPB
厂商: National Semiconductor
文件页数: 14/38页
文件大小: 0K
描述: IC OPAMP RRO 5MHZ SOT23-5
标准包装: 3,000
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 2 V/µs
增益带宽积: 5.6MHz
电流 - 输入偏压: 100nA
电压 - 输入偏移: 3500µV
电流 - 电源: 300µA
电流 - 输出 / 通道: 45mA
电压 - 电源,单路/双路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SC-74A,SOT-753
供应商设备封装: SOT-23-5
包装: 带卷 (TR)
其它名称: *LMV821M5X
*LMV821M5X/NOPB
LMV821M5X
LMV821M5X-ND
LMV821M5X/NOPBTR
SNOS032G – AUGUST 1999 – REVISED NOVEMBER 2013
(5)
Notice that R3 could also be calculated as 0.707 of Ra or R2.
The circuit was implemented and its cutoff frequency measured. The cutoff frequency measured at 2.92 kHz.
The circuit also showed good repeatability. Ten different LMV822 samples were placed in the circuit. The
corresponding change in the cutoff frequency was less than a percent.
TRI-LEVEL VOLTAGE DETECTOR
The tri-level voltage detector of Figure 44 provides a type of window comparator function. It detects three
different input voltage ranges: Min-range, Mid-range, and Max-range. The output voltage (VO) is at VCC for the
Min-range. VO is clamped at GND for the Mid-range. For the Max-range, VO is at Vee. Figure 45 shows a VO vs.
VI oscilloscope photo per the circuit of Figure 44.
Its operation is as follows: VI deviating from GND, causes the diode bridge to absorb IIN to maintain a clamped
condition (VO= 0V). Eventually, IIN reaches the bias limit of the diode bridge. When this limit is reached, the
clamping effect stops and the op amp responds open loop. The design equation directly preceding Figure 45,
shows how to determine the clamping range. The equation solves for the input voltage band on each side GND.
The mid-range is twice this voltage band.
Figure 44. Tri-level Voltage Detector
Copyright 1999–2013, Texas Instruments Incorporated
21
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