参数资料
型号: LMV824M/NOPB
厂商: National Semiconductor
文件页数: 33/38页
文件大小: 0K
描述: IC OP AMP R-R LOW VOLT LP 14SOIC
标准包装: 55
放大器类型: 通用
电路数: 4
输出类型: 满摆幅
转换速率: 2 V/µs
增益带宽积: 5.6MHz
电流 - 输入偏压: 100nA
电压 - 输入偏移: 3500µV
电流 - 电源: 1mA
电流 - 输出 / 通道: 45mA
电压 - 电源,单路/双路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 管件
产品目录页面: 1269 (CN2011-ZH PDF)
其它名称: *LMV824M
*LMV824M/NOPB
LMV824M
SNOS032G – AUGUST 1999 – REVISED NOVEMBER 2013
2.7V DC Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V
+ = 2.7V, V = 0V, V
CM = 1.0V, VO = 1.35V and R L > 1 M.
Boldface limits apply at the temperature extremes (
40°C ≤T J ≤85°C for LMV821/822/824 and 40°C ≤T J ≤125°C for
LMV822-Q1/LMV824-Q1).
Typ
LMV821/822/824
Symbol
Parameter
Condition
Units
(1)
Limit (2)
IS
Supply Current
LMV821 (Single)
0.3
mA
0.22
0.5
max
LMV822 (Dual)
0.6
mA
0.45
0.8
max
LMV824 (Quad)
1.0
mA
0.72
1.2
max
2.5V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V
+ = 2.5V, V = 0V, V
CM = 1.0V, VO = 1.25V and R L > 1 M.
Boldface limits apply at the temperature extremes (
40°C ≤T J ≤85°C for LMV821/822/824 and 40°C ≤T J ≤125°C for
LMV822-Q1/LMV824-Q1).
Typ
LMV821/822/824
Symbol
Parameter
Condition
Units
(1)
Limit (2)
VOS
Input Offset Voltage
LMV821/822/822-Q1/824
3.5
mV
1
4
max
LMV824-Q1
1
5.5
V O
Output Swing
2.30
V
2.37
2.20
min
V+ = 2.5V, RL = 600 to 1.25V
0.20
V
0.13
0.30
max
2.40
V
2.46
2.30
min
V+ = 2.5V, RL = 2k to 1.25V
0.12
V
0.08
0.20
max
(1)
Typical Values represent the most likely parametric norm.
(2)
All limits are guaranteed by testing or statistical analysis.
2.7V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V
+ = 2.7V, V = 0V, V
CM = 1.0V, VO = 1.35V and R L > 1 M.
Boldface limits apply at the temperature extremes (
40°C ≤T J ≤85°C for LMV821/822/824 and 40°C ≤T J ≤125°C for
LMV822-Q1/LMV824-Q1).
Typ
LMV821/822/824 Limit (2)
Symbol
Parameter
Conditions
Units
(1)
SR
Slew Rate
(3)
1.5
V/
μs
GBW
Gain-Bandwdth Product
5
MHz
Φm
Phase Margin
61
Deg.
Gm
Gain Margin
10
dB
Amp-to-Amp Isolation
(4)
135
dB
en
Input-Related Voltage Noise
f = 1 kHz, VCM = 1V
28
nV/
√Hz
in
Input-Referred Current Noise
f = 1 kHz
0.1
pA/
√Hz
THD
Total Harmonic Distortion
f = 1 kHz, AV = 2,
0.01
%
RL = 10 k, VO = 4.1 V PP
(1)
Typical Values represent the most likely parametric norm.
(2)
All limits are guaranteed by testing or statistical analysis.
(3)
V+ = 5V. Connected as voltage follower with 3V step input. Number specified is the slower of the positive and negative slew rates.
(4)
Input referred, V+ = 5V and RL = 100k connected to 2.5V. Each amp excited in turn with 1 kHz to produce V O = 3 VPP.
4
Copyright 1999–2013, Texas Instruments Incorporated
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