参数资料
型号: LMX2315WG-QML
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: PLL合成/DDS/VCOs
英文描述: PLL FREQUENCY SYNTHESIZER, 1200 MHz, CDSO20
封装: 0.300 INCH, CERAMIC, SOIC-20
文件页数: 6/12页
文件大小: 132K
代理商: LMX2315WG-QML
MICROCIRCUIT DATA SHEET
MNLMX2315-X REV 2B1
(Absolute Maximum Ratings)
(Note 1)
Power Supply Voltage
-0.3V to +6.5V
Vcc
-0.3V to +6.5V
Vp
Voltage on Any Pin
-0.3V to +6.5V
with Gnd = 0V (Vi)
Storage Temperature Range (Ts)
-65 C to +150 C
Power Dissipation
(Note 2)
1 Watt
Pd
Junction Temperature
(Note 2)
+150 C
Tj
Lead Temperature (Tl)
+260 C
(Solder, 4 sec.)
Thermal Resistance
(Note 2)
ThetaJA
120 C/W
(Still Air @ 0.5W)
86 C/W
(500LF/Min Air Flow @ 0.5W)
19 C/W
ThetaJC
Package Weight
600mg
(Typical)
ESD Tolerance
(Note 3)
Less Than 500V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guaranteed specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient theraml resistance), and TA (ambient temperature). The maximum allowable
power dissiaption at any temperature is Pdmax = (Tjmax -TA)
/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3:
This device is a high performance RF integrated circuit with an ESD rating <500V and
is ESD sensitive. Handling and assembly of this device should be done at ESD
workstations.
Recommended Operating Conditions
Power Supply Voltage
2.7V to 5.5V
Vcc
Vcc to +5.5V
Vp
Operating Temperature (TA)
-55 C to +105 C
3
相关PDF资料
PDF描述
LMX2315WG-QMLX PLL FREQUENCY SYNTHESIZER, 1200 MHz, CDSO20
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