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参数资料
| 型号： | LN184 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 红外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 4.6 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件页数： | 1/3页 |
| 文件大小： | 171K |
| 代理商： | LN184 |
1
Infrared Light Emitting Diodes
,,
,
4.0
±0.1
2.45
±0.25
4.6
±0.15
5.75max.
2-0.45
±0.05
2.0
1.0
max.
(0.4)
(0.29)
4.5
±0.2
12.7
min.
Unit : mm
1: Anode
2: Cathode
1
2
Spherical lens
Glass window
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Absolute Maximum Ratings (Ta = 25C)
Parameter
Symbol
Ratings
Unit
Power dissipation
PD
190
mW
Forward current (DC)
IF
90
mA
Pulse forward current
IFP*
230
mA
Reverse voltage (DC)
VR
3V
Operating ambient temperature
Topr
–25 to +85
C
Storage temperature
Tstg
– 40 to +100
C
* Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)
Infrared light emission close to monochromatics light :
λ
P = 880 nm
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
Electro-Optical Characteristics (Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant power
PO
IF = 100mA
3.5
mW
Peak emission wavelength
λ
P
IF = 100mA
880
nm
Spectral half band width
λ
IF = 100mA
50
nm
Forward voltage (DC)
VF
IF = 100mA
1.55
1.9
V
Reverse current (DC)
IR
VR = 3V
10
A
Rise time
tr
IFP = 100mA
20
ns
Fall time
tf
IFP = 100mA
20
ns
Half-power angle
θ
The angle in which radiant intencity is 50%
20
deg.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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