参数资料
型号: LP2981AIBP-3.3
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 基准电压源/电流源
英文描述: Micropower 100 mA Ultra Low-Dropout Regulator
中文描述: 3.3 V FIXED POSITIVE LDO REGULATOR, 0.375 V DROPOUT, PBGA5
封装: MICRO, SMD-5
文件页数: 9/20页
文件大小: 346K
代理商: LP2981AIBP-3.3
SLVS521B JULY 2004 REVISED OCTOBER 2004
9
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
basic application circuit (continued)
3.3
μ
F
1
μ
F
VIN
1
ON/OFF
2
GND
3
5
4
ADJ
LP2981-xxDBVR (Adjustable Version)
VOUT = VREF1
R
ADJ
R
1
RADJ
R1 39.5 k
Minimum Cout value for stability (can be increased without limit for improved stability and transient response)
See Application Information
Figure 3
absolute maximum ratings over the virtual junction temperature range (unless otherwise noted)
Continuous input voltage range, V
IN
ON/OFF input voltage range, V
ON/OFF
Output voltage range (see Note 1)
Input/output voltage differential range, V
IN
-V
OUT
(see Note 2)
Output current, I
OUT
(see Note 3)
Package thermal impedance,
θ
JA
(see Notes 3 and 4): DBV package
0.3 V to 16 V
0.3 V to 16 V
0.3 V to 9 V
0.3 V to 16 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internally limited (short-circuit protected)
. . . . . . . . . . . . . . . . . . . . . . . .
YEQ/YZQ package
. . . . . . . . . . . . . . . . . .
YEU/YZU package
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
206
°
C/W
TBD
°
C/W
TBD
°
C/W
150
°
C
Operating virtual junction temperature, T
J
Storage temperature range, T
stg
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. If load is returned to a negative power supply, the output must be diode clamped to GND.
2. The PNP pass transistor has a parasitic diode connected between the input and output. This diode normally is reverse biased
(VIN
>
VOUT), but will be forward biased if the output voltage exceeds the input voltage by a diode drop (see Application Information
for more details).
3. Maximum power dissipation is a function of TJ(max), JA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) TA)/JA. Operating at the absolute maximum TJ of 150
°
C can affect reliability.
4. The package thermal impedance is calculated in accordance with JESD 51-7.
65
°
C to 150
°
C
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