参数资料
型号: LPC1224FBD48/101,1
厂商: NXP Semiconductors
文件页数: 41/61页
文件大小: 0K
描述: MCU 32BIT 32K FLASH 4K 48-LQFP
产品培训模块: LPC1200 Series for Industrial Control
标准包装: 250
系列: LPC1200
核心处理器: ARM? Cortex?-M0
芯体尺寸: 32-位
速度: 45MHz
连通性: I²C,IrDA,Microwire,SPI,SSI,SSP,UART/USART
外围设备: 欠压检测/复位,DMA,POR,WDT
输入/输出数: 39
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 4K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 48-LQFP
包装: 托盘
其它名称: 568-5153
LPC1224FBD48/201
LPC1224FBD48/201,1
LPC122X
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 August 2011
46 of 61
NXP Semiconductors
LPC122x
32-bit ARM Cortex-M0 microcontroller
11.2 Flash memory
[1]
Erase and programming times are valid over the lifetime of the device (minimum 20000 cycles).
[2]
Number of program/erase cycles.
11.3 External clock
[1]
Parameters are valid over operating temperature range unless otherwise specified.
[2]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply
voltages.
Table 12.
Dynamic characteristic: flash memory
Tamb = 40 C to +85 C; VDD(3V3) over specified ranges.
Symbol
Parameter
Conditions
Min
Max
Unit
ter
erase time
for one page (512 byte)
[1] -20
ms
for one sector (4 kB)
162
ms
for all sectors; mass
erase
[1] -20
ms
tprog
programming
time
one word (4 bytes)
[1] -49
s
four sequential words
[1] -194
s
128 bytes (one row of 32
words)
[1] -765
s
Nendu
endurance
[2] 20000
-
cycles
tret
retention time
10
-
years
Table 13.
Dynamic characteristic: external clock
Tamb = 40 C to +85 C; VDD(3V3) over specified ranges.[1]
Symbol
Parameter
Conditions
Min
Max
Unit
fosc
oscillator frequency
1
-
25
MHz
Tcy(clk)
clock cycle time
40
-
1000
ns
tCHCX
clock HIGH time
Tcy(clk) 0.4
--ns
tCLCX
clock LOW time
Tcy(clk) 0.4
--ns
tCLCH
clock rise time
-
5
ns
tCHCL
clock fall time
-
5
ns
Fig 21. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV)
tCHCL
tCLCX
tCHCX
Tcy(clk)
tCLCH
002aaa907
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