参数资料
| 型号： | LT1113CS8#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 12/16页 |
| 文件大小： | 0K |
| 描述： | IC PREC OP-AMP JFET DUAL 8SOIC |
| 标准包装： | 100 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 转换速率： | 3.9 V/µs |
| 增益带宽积： | 5.6MHz |
| 电流 - 输入偏压： | 320pA |
| 电压 - 输入偏移： | 500µV |
| 电流 - 电源： | 5.3mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 20 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 产品目录页面： | 1317 (CN2011-ZH PDF) |
5
LT1113
1113fb
ELECTRICAL C
C
HARA TERISTICS
LT1113AM
LT1113M
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
AVOL
Large-Signal Voltage Gain
VO = ±12V, RL = 10k
q
800
2700
700
2500
V/mV
VO = ±10V, RL = 1k
q
400
1500
300
1000
V/mV
VOUT
Output Voltage Swing
RL = 10k
q
±13.0 ±12.5
±12.5 ±12.5
V
RL = 1k
q
±11.5 ±12.0
±11.0 ±12.0
V
SR
Slew Rate
RL ≥ 2k (Note 9)
q
1.9
3.3
1.6
3.3
V/
s
GBW
Gain Bandwidth Product
fO = 100kHz
q
2.2
3.4
2.2
3.4
MHz
IS
Supply Current Per Amplifier
q
5.30
6.35
5.30
6.55
mA
VS = ± 5V
q
5.25
6.30
5.25
6.50
mA
VOS
Offset Voltage Match
q
1.0
5.0
1.0
5.5
mV
IB+
Noninverting Bias Current Match
q
1.8
12
2.0
20
nA
CMRR Common Mode Rejection Match (Note 11)
q
75
92
73
92
dB
PSRR Power Supply Rejection Match (Note 11)
q
76
91
74
91
dB
The q denotes specifications which apply over the temperature range – 55
°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 12)
Note 1: Absolute Maximum Ratings are those values beyond which the
life of the device may be impaired.
Note 2: The LT1113C is guaranteed functional over the Operating
Temperature Range of –40
°C to 85°C. The LT1113M is guaranteed
functional over the Operating Temperature Range of – 55
°C to 125°C.
Note 3: The LT1113C is guaranteed to meet specified performance from
0
°C to 70°C. The LT1113C is designed, characterized and expected to
meet specified performance from –40
°C to 85°C but is not tested or QA
sampled at these temperatures. For guaranteed I grade parts, consult the
factory. The LT1113M is guaranteed to meet specified performance from
–55
°C to 125°C.
Note 4: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers, i.e., out of 100 LT1113s (200 op
amps) typically 120 op amps will be better than the indicated
specification.
Note 5: Warmed-up IB and IOS readings are extrapolated to a chip
temperature of 50
°C from 25°C measurements and 50°C characterization
data.
Note 6: Current noise is calculated from the formula:
in = (2qIB)
1/2
where q = 1.6 10 –19 coulomb. The noise of source resistors up to 200M
swamps the contribution of current noise.
Note 7: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 2.3mV
(A grade) to 2.8mV (C grade).
Note 8: This parameter is not 100% tested.
Note 9: Slew rate is measured in AV = –1; input signal is ±7.5V, output
measured at
±2.5V.
Note 10: The LT1113 is designed, characterized and expected to meet
these extended temperature limits, but is not tested at –40
°C and 85°C.
Guaranteed I grade parts are available. Consult factory.
Note 11:
CMRR and PSRR are defined as follows:
(1) CMRR and PSRR are measured in
V/V on the individual
amplifiers.
(2) The difference is calculated between the matching sides in
V/V.
(3) The result is converted to dB.
Note 12: The LT1113 is measured in an automated tester in less than
one second after application of power. Depending on the package used,
power dissipation, heat sinking, and air flow conditions, the fully
warmed-up chip temperature can be 10
°C to 50°C higher than the
ambient temperature.
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