参数资料
| 型号： | LT1168ACS8#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 16/20页 |
| 文件大小： | 0K |
| 描述： | IC AMP INSTR PREC PROG 8-SOIC |
| 标准包装： | 100 |
| 放大器类型： | 仪表 |
| 电路数： | 1 |
| 转换速率： | 0.5 V/µs |
| 增益带宽积： | 400kHz |
| 电流 - 输入偏压： | 40pA |
| 电压 - 输入偏移： | 15µV |
| 电流 - 电源： | 350µA |
| 电流 - 输出 / 通道： | 32mA |
| 电压 - 电源，单路/双路(±)： | 4.6 V ~ 36 V，±2.3 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 产品目录页面： | 1323 (CN2011-ZH PDF) |
5
LT1168
1168fa
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: If the input voltage exceeds the supplies, the input current should
be limited to less than 20mA.
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4: The LT1168AC/LT1168C are guaranteed functional over the
operating temperature range of – 40
°C and 85°C.
Note 5: The LT1168AC/LT1168C are guaranteed to meet specified
performance from 0
°C to 70°C. The LT1168AC/LT1168C are designed,
characterized and expected to meet specified performance from – 40
°C
to 85
°C but are not tested or QA sampled at these temperatures. The
LT1168AI/LT1168I are guaranteed to meet specified performance from
–40
°C to 85°C.
Note 6: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 7: Does not include the tolerance of the external gain resistor RG.
Note 8: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 9: This parameter is not 100% tested.
Note 10: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25
°C, but
the IC is cycled to 85
°C I-grade (or 70°C C-grade) or –40°C I-grade
(0
°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
The
● denotes the specifications which apply over the – 40
°C ≤ TA ≤ 85°C
temperature range. VS = ±15V, VCM = 0V, RL = 10k unless otherwise noted. (Note 5)
ELECTRICAL CHARACTERISTICS
LT1168AI
LT1168I
SYMBOL
PARAMETER
CONDITIONS (Note 6)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
VOST
Total Input Referred Offset Voltage
VOST = VOSI + VOSO/G
VOSI
Input Offset Voltage
●
20
75
25
100
V
VOSIH
Input Offset Voltage Hysteresis
(Notes 7, 10)
●
3.0
V
VOSO
Output Offset Voltage
●
180
500
200
600
V
VOSOH
Output Offset Voltage Hysteresis (Notes 7, 10)
●
30
V
VOSI/T
Input Offset Drift (RTI)
(Note 9)
●
0.05
0.3
0.06
0.4
V/°C
VOSO/T
Output Offset Drift
(Note 9)
●
0.8
5
1
6
V/°C
IOS
Input Offset Current
●
110
550
120
700
pA
IOS/T
Input Offset Current Drift
●
0.3
pA/
°C
IB
Input Bias Current
●
120
500
220
800
pA
IB/T
Input Bias Current Drift
●
1.4
pA/
°C
VCM
Input Voltage Range
VS = ±2.3V to ±5V
●
–VS + 2.1
+VS – 1.3 –VS + 2.1
+VS – 1.3
V
VS = ±5V to ±18V
●
–VS + 2.1
+VS – 1.4 –VS + 2.1
+VS – 1.4
V
CMRR
Common Mode
1k Source Imbalance,
Rejection Ratio
VCM = 0V to ±10V
G = 1
●
86
90
81
90
dB
G = 10
●
98
105
95
105
dB
G = 100
●
114
118
112
118
dB
G = 1000
●
116
133
112
133
dB
PSRR
Power Supply
VS = ±2.3V to ±18V
Rejection Ratio
G = 1
●
100
112
95
112
dB
G = 10
●
120
125
115
125
dB
G = 100
●
125
132
120
132
dB
G = 1000
●
128
140
125
140
dB
IS
Supply Current
●
420
650
420
650
A
VOUT
Output Voltage Swing
VS = ±2.3V to ±5V
●
–VS + 1.4
+VS – 1.3 –VS + 1.4
+VS – 1.3
V
VS = ±5V to ±18V
●
–VS + 1.6
+VS – 1.5 –VS + 1.6
+VS – 1.5
V
IOUT
Output Current
●
15
22
15
22
mA
SR
Slew Rate
●
0.22
0.41
0.22
0.42
V/
s
VREF
Voltage Range
(Note 9)
●
–VS + 1.6
+VS – 1.6 –VS + 1.6
+VS – 1.6
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LT1168AI | 制造商:LINER 制造商全称:Linear Technology 功能描述:Low Power, Single Resistor Gain Programmable, Micropower Precision Instrumentation Amplifier |
| LT1168AIN8 | 功能描述:IC AMP INSTR PROG PREC LP 8DIP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| LT1168AIN8#PBF | 功能描述:IC AMP INSTR PROG PREC LP 8DIP RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:1 输出类型:满摆幅 转换速率:0.11 V/µs 增益带宽积:350kHz -3db带宽:- 电流 - 输入偏压:4nA 电压 - 输入偏移:20µV 电流 - 电源:260µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):2.7 V ~ 36 V，±1.35 V ~ 18 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SO 包装:带卷 (TR) |
| LT1168AIS8 | 功能描述:IC AMP INSTR PROG PREC LP 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| LT1168AIS8#PBF | 功能描述:IC AMP INSTR PROG PREC LP 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:Excalibur™ 放大器类型:J-FET 电路数:1 输出类型:- 转换速率:45 V/µs 增益带宽积:10MHz -3db带宽:- 电流 - 输入偏压:20pA 电压 - 输入偏移:490µV 电流 - 电源:1.7mA 电流 - 输出 / 通道:48mA 电压 - 电源，单路/双路(±):4.5 V ~ 38 V，±2.25 V ~ 19 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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