参数资料
型号: LT1185IT#PBF
厂商: Linear Technology
文件页数: 5/16页
文件大小: 0K
描述: IC REG LDO NEG ADJ 3A TO220
产品培训模块: More Information on LDOs
标准包装: 50
稳压器拓扑结构: 负,可调式
输出电压: -2.5 V ~ -25 V
输入电压: -4.2 V ~ -35 V
电压 - 压降(标准): 0.67V @ 3A
稳压器数量: 1
电流 - 输出: 3A
电流 - 限制(最小): 可调式
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: TO-220-5 成形引线
供应商设备封装: TO-220-5
包装: 管件
产品目录页面: 1326 (CN2011-ZH PDF)
LT1185
APPLICATIO S I FOR ATIO
Block Diagram
A simplified block diagram of the LT1185 is shown in
Figure 1. A 2.37V bandgap reference is used to bias the
input of the error amplifier A1, and the reference amplifier
A2. A1 feeds a triple NPN pass transistor stage which has
the two driver collectors tied to ground so that the main
pass transistor can completely saturate. This topology
normally has a problem with unlimited current in Q1 and
Q2 when the input voltage is less than the minimum
required to create a regulated output. The standard “fix”
for this problem is to insert a resistor in series with Q1 and
conditions, resulting in very high supply current when the
input voltage is low. To avoid this situation, the LT1185
uses an auxiliary emitter on Q3 to create a drive limiting
feedback loop which automatically adjusts the drive to Q1
so that the base drive to Q3 is just enough to saturate Q3,
but no more. Under saturation conditions, the auxiliary
emitter is acting like a collector to shunt away the output
current of A1. When the input voltage is high enough to
keep Q3 out of saturation, the auxiliary emitter current
drops to zero even when Q3 is conducting full load current.
Q2 collectors, but this resistor must be low enough in
value to supply full base current for Q3 under worst-case
GND
V REF
R LIM (EXTERNAL)
2.37V
REF
FB
A1
+
A2
Q4
Q1
V OUT
D2
D4
D3
Q2
Q3
A5
A4
A3
+
+
+
300mV
I1
2 μ A
D1
R1
350 ?
200mV
R2
0.055 ?
V IN
LT1185 ? BD
Figure 1. Block Diagram
1185ff
5
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