参数资料
| 型号： | LT1189CS8#TR |
| 厂商： | Linear Technology |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | IC AMP VID DIFF CURR FDBK 8SOIC |
| 标准包装： | 2,500 |
| 应用： | 差分 |
| 电路数： | 1 |
| -3db带宽： | 35MHz |
| 转换速率： | 220 V/µs |
| 电流 - 电源： | 13mA |
| 电流 - 输出 / 通道： | 20mA |
| 电压 - 电源，单路/双路(±)： | 4.75 V ~ 16 V，±2.38 V ~ 8 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
LT1189
2
A
U
G
W
A
W
U
W
A
R
BSOLUTEXI
TI
S
WU
U
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
Total Supply Voltage (V + to V –) ............................. 18V
Differential Input Voltage ........................................
±6V
Input Voltage ..........................................................
±VS
Output Short Circuit Duration (Note 1) ........ Continuous
Operating Temperature Range
LT1189M ..................................... – 55
°C to 150°C
LT1189C............................................. 0
°C to 70°C
Junction Temperature (Note 2)
Plastic Package (CN8,CS8) ......................... 150
°C
Ceramic Package (CJ8,MJ8) ....................... 175
°C
Storage Temperature Range ................ – 65
°C to 150°C
Lead Temperature (Soldering, 10 sec.)................ 300
°C
S8 PART MARKING
LT1189MJ8
LT1189CJ8
LT1189CN8
LT1189CS8
LT1189M/C
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VOS
Input Offset Voltage
Either Input, (Note 4)
1.0
3.0
mV
SOIC Package
1.0
4.0
mV
IOS
Input Offset Current
Either Input
0.2
1.0
A
IB
Input Bias Current
Either Input
±0.5
±2.0
A
en
Input Noise Voltage
fO = 10kHz
30
nV/
√Hz
in
Input Noise Current
fO = 10kHz
1.25
pA/
√Hz
RIN
Input Resistance
Differential
30
k
CIN
Input Capacitance
Either Input
2.0
pF
VIN LIM
Input Voltage Limit
(Note 5)
±170
mV
Input Voltage Range
–2.5
3.5
V
CMRR
Common-Mode Rejection Ratio
VCM = –2.5V to 3.5V
80
105
dB
PSRR
Power Supply Rejection Ratio
VS = ± 2.375V to ±8V
75
90
dB
VOUT
Output Voltage Swing
VS = ± 5V, RL = 1k, AV = 50
±3.8
±4.0
V
VS = ± 8V, RL = 1k, AV = 50
±6.7
±7.0
VS = ±8V, RL = 300, AV = 50, (Note 3)
±6.4
±6.8
GE
Gain Error
VO = ±1.0V, AV = 10
1.0
3.5
%
SR
Slew Rate
(Note 6, 10)
150
220
V/
s
FPBW
Full Power Bandwidth
VO = 2VP-P, (Note 7)
35
MHz
BW
Small Signal Bandwidth
AV = 10
35
MHz
tr, tf
Rise Time, Fall Time
AV = 50, VO = ±1.5V, 20% to 80% (Note 10)
35
50
75
ns
tPD
Propagation Delay
RL= 1k, VO = ±125mV, 50% to 50%
12
ns
Overshoot
VO = ± 50mV
10
%
ts
Settling Time
3V Step, 0.1%, (Note 8)
1
s
Diff AV
Differential Gain
RL = 1k, AV = 10, (Note 9)
0.6
%
Diff Ph
Differential Phase
RL = 1k, AV = 10, (Note 9)
0.75
DEGP-P
IS
Supply Current
13
16
mA
Shutdown Supply Current
Pin 5 at V –
0.8
1.5
mA
VS = ±5V, VREF = 0V, RFB1 = 900 from pins 6 to 8, RFB2 = 100 from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open.
ELECTRICAL C
C
HARA TERISTICS T
A = 25°C, (Note 3)
5V
–
+
8
7
6
5
4
3
2
1
+/REF
–IN
+IN
V
S/D
OUT
+
V
–/FB
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SOIC
–
N8 PACKAGE
8-LEAD PLASTIC DIP
J8 PACKAGE
8-LEAD HERMETIC DIP
LT1189 POI01
1189
TJMAX = 175°C, θJA = 100°C/W (J8)
TJMAX = 150°C, θJA = 100°C/W (N8)
TJMAX = 150°C, θJA = 150°C/W (S8)
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