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参数资料
| 型号： | LT1671CMS8 |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 运动控制电子 |
| 英文描述： | 60ns, Low Power, Single Supply, Ground-Sensing Comparator |
| 中文描述： | COMPARATOR, 4000 uV OFFSET-MAX, 85 ns RESPONSE TIME, PDSO8 |
| 封装： | PLASTIC, MSOP-8 |
| 文件页数： | 9/12页 |
| 文件大小： | 199K |
| 代理商： | LT1671CMS8 |
9
LT1671
APPLICATIO
S I
N
FOR
ATIO
U
W
U
Figure 5 is a very versatile stage. It features a bipolar swing
that is set by the output transistor’s supplies. This 3ns
delay stage is ideal for driving FET switch gates. Q1, a
gated current source, switches the Baker-clamped output
transistor, Q2. The heavy feedforward capacitor from the
OUTPUT = 0
→
+V (TYPICALLY 3V TO 4V)
1671 F03
+V
1671 F04
1k
12pF
HP5082-2810
2N2369
2N3866
RISE TIME = 4ns
FALL TIME = 5ns
OUT
15V
–
+
1k
1k
LT1671
Figure 3. Simplified LT1671 Output Stage
Figure 4. Level Shift Has Noninverting Voltage Gain
1671 F05
OUTPUT TRANSISTOR SUPPLIES
(SHOWN IN HEAVY LINES)
CAN BE REFERENCED ANYWHERE
BETWEEN 15V AND –15V
1000pF
–10V (TYP)
1N4148
5V (TYP)
INPUT
5V
5V
–10V
–
+
0.1
μ
F
820
LT1671
4.7k
820
RISE TIME = 3ns
FALL TIME = 3ns
430
330
Q1
2N2907
Q2
2N2369
OUTPUT
HP5082-2810
Figure 5. Level Shift with Inverting Voltage Gain—Bipolar Swing
1671 F06
1k
12pF
2N2369
2N3866
2N5160
POWER
FET
RISE TIME = 7ns
FALL TIME = 9ns
15V
–
+
1k
1k
R
L
LT1671
Figure 6. Noninverting Voltage Gain Level Shift
LT1671 is the key to low delay, providing Q2’s base with
nearly ideal drive. This capacitor loads the LT1671’s
output transition, but Q2’s switching is clean with 3ns
delay on the rise and fall of the pulse. Figure 6 is similar to
Figure 4 except that a sink transistor has replaced the
Schottky diode. The two emitter-followers drive a power
MOSFET that switches 1A at 15V. Most of the 7ns to 9ns
delay in this stage occurs in the MOSFET and the 2N2369.
When designing level shifters, remember to use transis-
tors with fast switching times and high f
T
. To get the kind
of results shown, switching times in the nanosecond
range and an f
T
approaching 1GHz are required.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LT1671CMS8#PBF | 功能描述:IC COMPARATOR 60NS LOW PWR 8MSOP RoHS:是 类别:集成电路 (IC) >> 线性 - 比较器 系列:- 标准包装:25 系列:- 类型:带电压基准 元件数:4 输出类型:CMOS，开路漏极，TTL 电压 - 电源，单路/双路(±):2 V ~ 11 V，±1 V ~ 5.5 V 电压 - 输入偏移（最小值）:10mV @ 5V 电流 - 输入偏压（最小值）:- 电流 - 输出（标准）:0.015mA @ 5V 电流 - 静态（最大值）:8.5µA CMRR, PSRR（标准）:80dB CMRR，80dB PSRR 传输延迟（最大）:12µs 磁滞:50mV 工作温度:0°C ~ 70°C 封装/外壳:16-DIP（0.300"，7.62mm） 安装类型:通孔 包装:管件 |
| LT1671CMS8#TR | 功能描述:IC COMPARATOR 60NS LOW PWR 8MSOP RoHS:否 类别:集成电路 (IC) >> 线性 - 比较器 系列:- 标准包装:25 系列:- 类型:带电压基准 元件数:4 输出类型:CMOS，开路漏极，TTL 电压 - 电源，单路/双路(±):2 V ~ 11 V，±1 V ~ 5.5 V 电压 - 输入偏移（最小值）:10mV @ 5V 电流 - 输入偏压（最小值）:- 电流 - 输出（标准）:0.015mA @ 5V 电流 - 静态（最大值）:8.5µA CMRR, PSRR（标准）:80dB CMRR，80dB PSRR 传输延迟（最大）:12µs 磁滞:50mV 工作温度:0°C ~ 70°C 封装/外壳:16-DIP（0.300"，7.62mm） 安装类型:通孔 包装:管件 |
| LT1671CMS8#TRPBF | 功能描述:IC COMPARATOR 60NS LOW PWR 8MSOP RoHS:是 类别:集成电路 (IC) >> 线性 - 比较器 系列:- 标准包装:25 系列:- 类型:带电压基准 元件数:4 输出类型:CMOS，开路漏极，TTL 电压 - 电源，单路/双路(±):2 V ~ 11 V，±1 V ~ 5.5 V 电压 - 输入偏移（最小值）:10mV @ 5V 电流 - 输入偏压（最小值）:- 电流 - 输出（标准）:0.015mA @ 5V 电流 - 静态（最大值）:8.5µA CMRR, PSRR（标准）:80dB CMRR，80dB PSRR 传输延迟（最大）:12µs 磁滞:50mV 工作温度:0°C ~ 70°C 封装/外壳:16-DIP（0.300"，7.62mm） 安装类型:通孔 包装:管件 |
| LT1671CMS8PBF | 制造商:Linear Technology 功能描述:Ground-Sensing Comparator 60ns MSOP8 |
| LT1671CS8 | 功能描述:IC COMP GRND-SENSNG LOWPWR 8SOIC RoHS:否 类别:集成电路 (IC) >> 线性 - 比较器 系列:- 标准包装:25 系列:- 类型:带电压基准 元件数:4 输出类型:CMOS，开路漏极，TTL 电压 - 电源，单路/双路(±):2 V ~ 11 V，±1 V ~ 5.5 V 电压 - 输入偏移（最小值）:10mV @ 5V 电流 - 输入偏压（最小值）:- 电流 - 输出（标准）:0.015mA @ 5V 电流 - 静态（最大值）:8.5µA CMRR, PSRR（标准）:80dB CMRR，80dB PSRR 传输延迟（最大）:12µs 磁滞:50mV 工作温度:0°C ~ 70°C 封装/外壳:16-DIP（0.300"，7.62mm） 安装类型:通孔 包装:管件 |
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