参数资料
型号: LT1931AIS5#TRPBF
厂商: Linear Technology
文件页数: 8/12页
文件大小: 0K
描述: IC REG INV 1A TSOT23-5
标准包装: 2,500
类型: 反相
输出数: 1
输入电压: 2.45 V ~ 16 V
PWM 型: 电流模式
频率 - 开关: 2.2MHz
电流 - 输出: 1A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-5 细型,TSOT-23-5
包装: 带卷 (TR)
供应商设备封装: TSOT-23-5
LT1931/LT1931A
APPLICATIO S I FOR ATIO
DIODE SELECTION
V OUT
2V/DIV
I IN
A Schottky diode is recommended for use with the LT1931/
LT1931A. The Motorola MBR0520 is a very good choice.
Where the input to output voltage differential exceeds 20V,
0.5A/DIV
AC COUPLED
V SS 5V
0V
200 μ s/DIV
1931 F08
use the MBR0530 (a 30V diode). These diodes are rated to
handle an average forward current of 0.5 A. In applications
where the average forward current of the diode exceeds
0.5A, a Microsemi UPS5817 rated at 1A is recommended.
Figure 8. R SS = 15k, C SS = 33nF; V OUT Reaches – 5V in 1ms;
Input Current Peaks at 500mA
LAYOUT HINTS
The high-speed operation of the LT1931/LT1931A de-
V OUT
2V/DIV
I IN
0.5A/DIV
AC COUPLED
V SS 5V
0V
500 μ s/DIV
1931 F09
mands careful attention to board layout. You will not get
advertised performance with careless layout. Figure 10
shows the recommended component placement. The
ground cut at the cathode of D1 is essential for low noise
operation.
Figure 9. R SS = 15k, C SS = 68nF; V OUT Reaches – 5V in 1.6ms;
Input Current Peaks at 350mA
L1B
L1A
increased to 68nF, resulting in a lower peak input current
of 350mA with a V OUT ramp time of 1.6ms. C SS or R SS can
be increased further for an even slower ramp, if desired.
–V OUT
C3
D1
C2
1
C1
5
+
V IN
Diode D2 serves to quickly discharge C SS when V SS is
2
driven low to shut down the device. D2 can be omitted,
resulting in a “soft-stop” slow discharge of the output
R2
3
4
SHUTDOWN
capacitor.
GND
R1
1931 F10
Figure 10. Suggested Component Placement.
Note Cut in Ground Copper at D1’s Cathode
1931fa
8
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