参数资料
型号: LT3485EDD-0#TR
厂商: LINEAR TECHNOLOGY CORP
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO10
封装: 3 X 3 MM, PLASTIC, MO-229WEED-2, DFN-10
文件页数: 4/20页
文件大小: 339K
代理商: LT3485EDD-0#TR
LT3485-0/LT3485-1/
LT3485-2/LT3485-3
12
34850123fb
APPLICATIO S I FOR ATIO
WU
U
The peak current of the diode is simply:
I=
2
N
LT3485-3
I=
1.4
N
LT3485-0
PK-SEC
()
(
))
()
I=
1
N
LT3485-2
I=
0.7
N
LT3485-
PK-SEC
1
()
For the circuit of Figure 8 with VBAT of 5V, VPK-R is 371V
and IPK-SEC is 137mA. The GSD2004S dual silicon diode
is recommended for most LT3485-0/LT3485-1/LT3485-
2/LT3485-3 applications. Another option is to use the
BAV23S dual silicon diodes. Table 3 shows the various
diodes and relevant specifications. Use the appropriate
number of diodes to achieve the necessary reverse break-
down voltage.
IGBT Drive
The IGBT is a high current switch for the 100A+ current
through the photoflash lamp. To create a redeye effect or
to adjust the light output, the lamp current needs to be
stopped, or quenched, with an IGBT before discharging
the photoflash capacitor fully. The IGBT device also con-
trols the 4kV trigger pulse required to ionize the xenon gas
in the photoflash lamp. Figure 5 is a schematic of a fully
functional photoflash application with the LT3485 serving
as the IGBT drive. An IGBT drive charges the gate capaci-
tance to start the flash. The IGBT drive does not need to
pull-up the gate fast because of the inherently slow nature
of the IGBT. A rise time of 2
s is sufficient to charge the
gate of the IGBT and create a trigger pulse. With slower
rise times, the trigger circuitry will not have a fast enough
edge to create the required 4kV pulse. The fall time of the
IGBT drive is critical to the safe operation of the IGBT. The
IGBT gate is a network of resistors and capacitors, as
shown in Figure 6. When the gate terminal is pulled low,
Table 3. Recommended Output Diodes
MAX REVERSE VOLTAGE
MAX FORWARD CONTINUOUS CURRENT
CAPACITANCE
PART
(V)
(mA)
(pF)
VENDOR
GSD2004S
2x300
225
5
Vishay
(Dual Diode)
(402) 563-6866
www.vishay.com
BAV23S
2x250
225
5
Philips Semiconductor
(Dual Diode)
(800) 234-7381
www.philips.com
MMBD3004S
2x350
225
5
Diodes Inc
(Dual Diode)
(816) 251-8800
www.diodes.com
Figure 5. Complete Xenon Circuit
LT3485-0
IGBTOUT
IGBTIN
VIN
IGBTPWR
GND
VMONT
VBAT
SW
4.7
F
1:10.2
VBAT
2 AA OR
1 TO 2 Li-Ion
0.22
F
VCC
5V
320V
TO
MICRO
1
T
C
A
2
3
1
2
4
5
3485 F05
150
F
PHOTOFLASH
CAPACITOR
2.2
F
600V
1M
CHARGE
DONE
TRIGGER
FLASHLAMP
IGBT
相关PDF资料
PDF描述
LT3493EDCB-3#TR 2.2 A SWITCHING REGULATOR, 815 kHz SWITCHING FREQ-MAX, PDSO6
LT3494EDDB#PBF 0.25 A SWITCHING REGULATOR, PDSO8
LT3494EDDB 0.25 A SWITCHING REGULATOR, PDSO8
LT3502AEDC#PBF 1.1 A SWITCHING REGULATOR, 2800 kHz SWITCHING FREQ-MAX, PDSO8
LT3502AIDC#PBF 1.1 A SWITCHING REGULATOR, 2800 kHz SWITCHING FREQ-MAX, PDSO8
相关代理商/技术参数
参数描述
LT3485EDD-1 制造商:LINER 制造商全称:Linear Technology 功能描述:Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive
LT3485EDD-1#PBF 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 标准包装:1 系列:- 应用:手持/移动设备 电流 - 电源:- 电源电压:3 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-WFDFN 裸露焊盘 供应商设备封装:14-LLP-EP(4x4) 包装:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名称:LP3905SD-30DKR
LT3485EDD-1#TRPBF 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 标准包装:1 系列:- 应用:手持/移动设备 电流 - 电源:- 电源电压:3 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-WFDFN 裸露焊盘 供应商设备封装:14-LLP-EP(4x4) 包装:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名称:LP3905SD-30DKR
LT3485EDD-2 制造商:LINER 制造商全称:Linear Technology 功能描述:Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive
LT3485EDD-2#PBF 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 标准包装:1 系列:- 应用:手持/移动设备 电流 - 电源:- 电源电压:3 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-WFDFN 裸露焊盘 供应商设备封装:14-LLP-EP(4x4) 包装:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名称:LP3905SD-30DKR